Photodetectors: Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator (Adv. Funct. Mater. 31/2018),Advanced Functional Materials

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Photodetectors: Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator (Adv. Funct. Mater. 31/2018)
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-07-30 , DOI: 10.1002/adfm.201870219
Weiwei Tang _{1,

2,

3} , Antonio Politano ₄ , Cheng Guo _{1,

2,

3} , Wanlong Guo ₁ , Changlong Liu _{1,

2,

3} , Lin Wang _{1,

2,

3} , Xiaoshuang Chen _{1,

2,

3} , Wei Lu _{1,

2,

3}

Affiliation

In article number 1801786, Lin Wang, Xiaoshuang Chen, and their co‐workers propose a metal‐topological insulator–metal subwavelength structure for ultrasensitivity, room temperature terahertz photodetection. The integration of a topological insulator and micro structures exploits the unique properties of topological surface states and opens up a new route for fast imaging applications, promising a superb impact on THz optoelectronics.

中文翻译：

光电探测器：基于硒化铋拓扑绝缘体的超灵敏室温太赫兹直接检测（Adv。Funct。Mater。31/2018）

王琳，陈晓双及其同事在编号1801786中提出了一种金属拓扑绝缘体-金属亚波长结构，用于超灵敏，室温太赫兹光检测。拓扑绝缘体和微结构的集成利用了拓扑表面状态的独特特性，并为快速成像应用开辟了一条新途径，有望对太赫兹光电产生巨大影响。

更新日期：2018-07-30

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