Layer-Number-Dependent Exciton Recombination Behaviors of MoS2 Determined by Fluorescence-Lifetime Imaging Microscopy,The Journal of Physical Chemistry C

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Layer-Number-Dependent Exciton Recombination Behaviors of MoS2 Determined by Fluorescence-Lifetime Imaging Microscopy
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-08-06 , DOI: 10.1021/acs.jpcc.8b02393
Ting Wang ₁ , Yirui Zhang _{1,

2} , Yuanshuang Liu ₁ , Junyi Li ₁ , Dameng Liu ₁ , Jianbin Luo ₁ , Kai Ge ₃

Affiliation

The fluorescence-lifetime imaging microscopy (FLIM) technique is utilized to probe the photoluminescence properties of individual MoS₂ flakes. This measurement allows identification of the layer number of the flakes: two fluorescence decay lifetimes (τ₁ and τ₂) exhibit linear relationships with the layer number. Our investigation of the fluorescence lifetime reveals exciton dynamics in monolayer and multilayers MoS₂. We find the distinct difference on the decay rates between A exciton (fast) and B exciton (slow). K′/Γ emission has different decay behaviors with respect to the layer number (N) because of its variable energy in monolayer and multilayer samples. The interplay of these transition channels also plays an important impact on the overall decay. Our results demonstrate that FLIM is an effective measurement for studying the luminescence properties of transition metal dichalcogenides.

中文翻译：

通过荧光寿命成像显微镜确定的MoS ₂的层数依赖激子复合行为。

荧光寿命成像显微镜（FLIM）技术用于探测单个MoS ₂薄片的光致发光特性。该测量允许薄片的层编号的鉴别：2荧光衰减寿命（τ ₁和τ ₂）显示出与线性层编号的关系。我们对荧光寿命的研究揭示了单层和多层MoS _2中的激子动力学。我们发现A激子（快）和B激子（慢）之间的衰减率存在明显差异。K'/Γ发射相对于层数具有不同的衰减行为（N），因为它在单层和多层样品中具有可变的能量。这些过渡通道的相互作用也对整体衰减起重要作用。我们的结果表明，FLIM是用于研究过渡金属二卤化物的发光性质的有效方法。

更新日期：2018-08-07

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