Laser‐Assisted Doping: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction (Adv. Mater. 2/2016),Advanced Materials

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Laser‐Assisted Doping: Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction (Adv. Mater. 2/2016)
Advanced Materials ( IF 27.4 ) Pub Date : 2016-01-08 , DOI: 10.1002/adma.201670014
Eunpa Kim ₁ , Changhyun Ko ₂ , Kyunghoon Kim ₃ , Yabin Chen ₂ , Joonki Suh ₂ , Sang-Gil Ryu ₁ , Kedi Wu ₄ , Xiuqing Meng _{2,

4,

5} , Aslihan Suslu ₄ , Sefaattin Tongay ₄ , Junqiao Wu _{2,

6} , Costas P. Grigoropoulos ₁

Affiliation

Laser‐assisted phosphorus doping is demonstrated by J. Wu, C. P. Grigoropoulos, and co‐workers on page 341, on ultrathin transition‐metal dichalcogenides (TMDCs), including n‐type MoS₂ and p‐type WSe₂. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser‐assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.

中文翻译：

激光辅助掺杂：通过激光辅助反应对超薄金属二硫属元素化物进行现场选择性掺杂（Adv。Mater。2/2016）

J. Wu，CP Grigoropoulos及其同事在第341页的超薄过渡金属二卤化物（TMDCs）上论证了激光辅助磷掺杂，包括n型MoS ₂和p型WSe ₂。掺杂的时间和空间控制是通过改变激光照射功率和时间来实现的，证明了宽的可调谐性和高的位点选择性以及高的稳定性。激光辅助掺杂方法可以为定制的纳米器件应用中的TMDC功能化开辟新途径。

更新日期：2016-01-08

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