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The Role of Surface Defects in Photoluminescence and Decay Dynamics of High-Quality Perovskite MAPbI3 Single Crystals
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2018-07-11 00:00:00 , DOI: 10.1021/acs.jpclett.8b01898 Jie Ding 1 , Zhipeng Lian 1 , Yu Li 2 , Shufeng Wang 2 , Qingfeng Yan 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2018-07-11 00:00:00 , DOI: 10.1021/acs.jpclett.8b01898 Jie Ding 1 , Zhipeng Lian 1 , Yu Li 2 , Shufeng Wang 2 , Qingfeng Yan 1
Affiliation
Halide perovskites have recently been a star semiconductor material in photovoltaic field owing to their excellent optoelectronic properties. An in-depth understanding of the photoluminescence and carrier diffusion in these materials may facilitate the implementation of high-performance optolelctronic devices. Here, we report an unusual photoluminescence quenching phenomenon in MAPbI3 single crystals. Interestingly, MAPbI3 single crystal with higher crystalline quality shows a lower photoluminescence emission and a shorter decay time, indicating the surface imperfection plays an important role to the photoluminescence. The quick quenching process is attributed to the synergistic effect of localized effect at the defects and rapid inward diffusion.
中文翻译:
表面缺陷在高质量钙钛矿MAPbI 3单晶的光致发光和衰变动力学中的作用
卤化物钙钛矿由于其优异的光电性能,最近已成为光伏领域的明星半导体材料。对这些材料中的光致发光和载流子扩散的深入了解可以促进高性能光电子器件的实现。在这里,我们报告了MAPbI 3单晶中异常的光致发光猝灭现象。有趣的是,具有较高晶体质量的MAPbI 3单晶显示出较低的光致发光发射和较短的衰减时间,表明表面缺陷对光致发光起着重要的作用。快速淬火过程归因于缺陷处局部效应和快速向内扩散的协同效应。
更新日期:2018-07-11
中文翻译:
表面缺陷在高质量钙钛矿MAPbI 3单晶的光致发光和衰变动力学中的作用
卤化物钙钛矿由于其优异的光电性能,最近已成为光伏领域的明星半导体材料。对这些材料中的光致发光和载流子扩散的深入了解可以促进高性能光电子器件的实现。在这里,我们报告了MAPbI 3单晶中异常的光致发光猝灭现象。有趣的是,具有较高晶体质量的MAPbI 3单晶显示出较低的光致发光发射和较短的衰减时间,表明表面缺陷对光致发光起着重要的作用。快速淬火过程归因于缺陷处局部效应和快速向内扩散的协同效应。