A monolayer Ca₂Nb₃O₁₀ (CNO) nanosheet was deposited on a Pt/Ti/SiO₂/Si substrate using the Langmuir–Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na_1–xK_x)NbO₃ (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400 °C. The ferroelectric and piezoelectric properties of this NKN film were influenced by the postannealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300 °C under 50 Torr O₂ atmosphere showed promising ferroelectric and piezoelectric properties; ε_r of 303 and tan δ of 2.0% at 100 kHz, P_s of 15.3 μC/cm², P_r of 11.7 μC/cm², and E_c of 78 kV/cm, and d₃₃ of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal-oxide nanosheets as the seed layer.

中文翻译：

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使用二维Ca ₂ Nb ₃ O ₁₀纳米片种子层在低温下生长的（Na _{1– x} K _x）NbO ₃薄膜的物理性质

使用Langmuir-Blodgett方法将单层Ca ₂ Nb ₃ O ₁₀（CNO）纳米片沉积在Pt / Ti / SiO ₂ / Si衬底上。具有（001）表面终止的单层CNO纳米片用作种子层，以降低晶体（Na _{1- x} K _x）NbO ₃（NKN）膜的生长温度。结晶NKN膜优选在400℃下沿[001]方向生长。由于NKN薄膜中氧空位数量的变化，该NKN薄膜的铁电和压电性能受到后退火气氛的影响。晶体NKN膜在50 Torr O ₂下于300°C退火气氛显示出良好的铁电和压电性能；ε _{- [R} 303，并在100千赫的2.0％黄褐色δ，P_小号15.3μC/厘米的²，P _[R 11.7μC/厘米²，和È _Ç 78千伏/厘米，和d ₃₃为139点/ V。这种NKN膜显示出最低的泄漏电流，这可以通过肖特基发射机理来解释。计算得出Pt / NKN和NKN / CNO / Pt界面的肖特基势垒高度分别为0.97和0.28 eV。这项工作的结果提出了一种通过使用金属氧化物纳米片作为种子层在低温下生长晶体薄膜的新方法。