具有高SCLC空穴迁移率的多环芳烃旋涂薄膜,The Journal of Physical Chemistry C

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具有高SCLC空穴迁移率的多环芳烃旋涂薄膜
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-01-05 00:00:00 , DOI: 10.1021/acs.jpcc.5b10232
Yong Li ₁ , Robert G. Clevenger ₁ , Lu Jin ₁ , Kathleen V. Kilway ₁ , Zhonghua Peng ₁

Affiliation

在开发尖端的有机电子和光电器件中，已经强烈追求高电荷载流子迁移率。尽管已经报道了溶液处理的有机半导体薄膜的高场效应晶体管空穴迁移率，但是它们的空间电荷限制电流（SCLC）迁移率仍然大大降低。在这里，我们报告了四种多环芳烃的合成和薄膜SCLC空穴迁移率，具体来说是2,5,8,17-四叔丁基二c并[1,2- j：1'，2'- l ]荧蒽（1），2,5,8,11,14,17-六叔丁基二c并[1,2- j：1'，2'- l ]荧蒽（2），2,9,12,15 -四-叔-butylacenaphtho [1,2 Ĵ ]苯并[升]荧蒽（3），和2,9,12,15 -四-叔丁基- 4,5 6,7-四苯基ac [1,2- j ]苯并[ l ]荧蒽（4）。化合物的旋涂原始薄膜1 - 4 1.18±0.18×10表现出SCLC空穴迁移率^-3，3.8±0.9×10 ^-5，2.00±0.87×10 ^-3，和2.27±0.67×10 ^-4厘米² V ^–1 s ^–1，分别。当在120℃下进行10分钟的热退火，化合物1，2，和4度示出了在限制它们的光学特性和空穴迁移率的变化。相比之下，对3层薄膜进行热退火会导致吸收和发射变宽和红移，并显着提高SCLC空穴迁移率，最高可达3.4±0.1×10 ^–1 cm ² V ^–1 s ^–1，这是其中之一。在溶液处理的有机半导体薄膜上，有史以来最高的SCLC空穴迁移率。薄膜3的空穴迁移率的这种改善归因于其从根本上增强的结晶度和分子间π-π重叠。不幸的是，化合物3的并苯核的扩展（希望进一步增强π-π堆积相互作用并因此进一步改善SCLC迁移性）未能成功，因为所得分子显示出较差的成膜性能。

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Spin-Coated Thin Films of Polycyclic Aromatic Hydrocarbons Exhibiting High SCLC Hole Mobilities

High charge carrier mobilities have been greatly sought after in the development of cutting-edge organic electronic and optoelectronic devices. Although high field-effect transistor hole mobilities have been reported for solution-processed organic semiconductor thin films, their space-charge-limited current (SCLC) mobilities are still substantially lower. Herein, we report the synthesis and thin film SCLC hole mobilities of four polycyclic aromatic hydrocarbons, specifically, 2,5,8,17-tetra-tert-butyldiacenaphtho[1,2-j:1′,2′-l]fluoranthene (1), 2,5,8,11,14,17-hexa-tert-butyldiacenaphtho[1,2-j:1′,2′-l]fluoranthene (2), 2,9,12,15-tetra-tert-butylacenaphtho[1,2-j]benzo[l]fluoranthene (3), and 2,9,12,15-tetra-tert-butyl-4,5,6,7-tetraphenylacenaphtho[1,2-j]benzo[l]fluoranthene (4). Spin-coated pristine thin films of compounds 1–4 exhibit SCLC hole mobilities of 1.18 ± 0.18 × 10^–3, 3.8 ± 0.9 × 10^–5, 2.00 ± 0.87 × 10^–3, and 2.27 ± 0.67 × 10^–4 cm² V^–1 s^–1, respectively. Upon thermal annealing at 120 °C for 10 min, compounds 1, 2, and 4 show limited changes in their optical properties and hole mobilities. In contrast, thermal annealing of thin films of 3 leads to broadened and red-shifted absorptions and emissions as well as drastically improved SCLC hole mobilities as high as 3.4 ± 0.1 × 10^–1 cm² V^–1 s^–1, one of the highest ever recorded SCLC hole mobilities on solution-processed organic semiconductor thin films. This improvement of the hole mobilities for the thin films of 3 is attributed to its radically enhanced crystallinity and intermolecular π–π overlap. Expansion of compound 3’s acene core with the hopes of further strengthening the π–π stacking interaction and thus further improving the SCLC mobility was unfortunately unsuccessful as the resulting molecule exhibits poor film formation properties.

更新日期：2016-01-05

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