Deep Oxidation of NO by a Hybrid System of Plasma–N-Type Semiconductors: High-Energy Electron-Activated “Pseudo Photocatalysis” Behavior,Environmental Science & Technology

当前位置： X-MOL 学术 › Environ. Sci. Technol. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Deep Oxidation of NO by a Hybrid System of Plasma–N-Type Semiconductors: High-Energy Electron-Activated “Pseudo Photocatalysis” Behavior
Environmental Science & Technology ( IF 10.8 ) Pub Date : 2018-07-18 , DOI: 10.1021/acs.est.8b00655
Si Chen _{1,

2} , Haiqiang Wang _{1,

2} , Mengpa Shi _{1,

2} , Haoling Ye _{1,

2} , Zhongbiao Wu _{1,

2}

Affiliation

A “pseudo photocatalysis” process, being initiated between plasma and N-type semiconductors in the absence of light, was investigated for NO removal for the first time via dynamic probing of reaction processes by FT-IR spectra. It was demonstrated that N-type semiconductor catalysts could be activated to produce electron–hole (e^––h⁺) pairs by the collision of high-energy electrons (e*) from plasma. Due to the synergy of plasma and N-type semiconductors, major changes were noted in the conversion pathways and products. NO can be directly converted to NO₂^– and NO₃^– instead of toxic NO₂, owing to the formation of O₂^– and ·OH present in catalysts. New species like O₃ or ·O may be generated from the interaction between catalyst-induced species and radicals in plasma at a higher SIE, leading to deep oxidation of existing NO₂ to N₂O₅. Experiments with added trapping agents confirmed the contribution of e^– and h⁺ from catalysts. A series of possible reactions were proposed to describe reaction pathways and the mechanism of this synergistic effect. We established a novel system and realized an e*-activated “pseudo photocatalysis” behavior, facilitating the deep degradation of NO. We expect that this new strategy would provide a new idea for in-depth analysis of plasma-activated catalysis phenomenon.

中文翻译：

等离子体N型半导体的混合系统对NO的深度氧化：高能电子激活的“伪光催化”行为

通过FT-IR光谱对反应过程进行动态探测，首次研究了在没有光的情况下在等离子体和N型半导体之间启动的“伪光催化”过程。结果表明，通过等离子体中高能电子（e *）的碰撞，可以激活N型半导体催化剂以产生电子-空穴（e ^– –h ⁺）对。由于等离子体和N型半导体的协同作用，因此在转化途径和产物方面发生了重大变化。NO可以直接转换到NO ₂^-和NO ₃^-的取代有毒NO ₂，由于的O-形成₂^-催化剂中存在·OH。在较高的SIE下，催化剂诱导的物种与等离子体中的自由基之间的相互作用可能会生成新的物种，如O ₃或·O，从而将现有的NO ₂深度氧化为N ₂ O ₅。添加了捕获剂的实验证实了电子商务的贡献^-和H ⁺的催化剂。提出了一系列可能的反应来描述反应途径和这种协同效应的机理。我们建立了一个新颖的系统，并实现了e *激活的“伪光催化”行为，从而促进了NO的深度降解。我们希望这种新策略将为深入分析等离子体活化的催化现象提供新的思路。

更新日期：2018-07-19

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南