平面钙钛矿太阳能电池通过PCBM掺杂和界面改善的高电流密度和低滞后效应,ACS Applied Materials & Interfaces

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平面钙钛矿太阳能电池通过PCBM掺杂和界面改善的高电流密度和低滞后效应
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-07-03 00:00:00 , DOI: 10.1021/acsami.8b06020
He Jiang , Gelei Jiang , Weiwei Xing , Weiming Xiong , Xiaoyue Zhang , Biao Wang ₁ , Huiyan Zhang , Yue Zheng

Affiliation

我们提出了一种掺杂方法，该方法使用[6,6]-苯基-C _61-丁酸甲酯（PCBM）填充甲基铵碘化铅（CH ₃ NH ₃ PbI ₃）钙钛矿的晶界间隙，以消除针孔。在钙钛矿和TiO ₂层之间还使用了夹层的PCBM层，以改善界面接触。通过使用这两种方法，所制造的钙钛矿太阳能电池表现出低的磁滞效应和高的电流密度，这是由于钙钛矿表面的晶界和TiO ₂之间的界面处的致密性提高所致。/钙钛矿层。理论和实验结果表明，PCBM可以有效地抑制载流子复合，而与界面层或掺杂剂无关。我们还发现，暗电流的暗态电流-电压（在分析过程中减少了我- V）特性。掺杂氟的氧化锡/掺杂PCBM的钙钛矿/ Au器件的I – V曲线的斜率随着PCBM浓度从0.01 wt％到0.1 wt％的增加而单调减少，这表明钙钛矿层中的缺陷减少了。通过调整PCBM掺杂并控制制备过程，我们成功地制备了平面TiO ₂基于/ PCBM的掺杂PCBM的钙钛矿型光伏器件，具有22.6 mA / cm ²的高电流密度和高达18.3％的出色光电转换效率。PCBM掺杂浓度和界面制备的可控性为进一步优化钙钛矿太阳能电池的光电转换效率提供了依据。

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High Current Density and Low Hysteresis Effect of Planar Perovskite Solar Cells via PCBM-doping and Interfacial Improvement

We propose a doping method by using [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) to fill the grain boundary interstices of the methylammonium lead iodide (CH₃NH₃PbI₃) perovskite for the elimination of pinholes. A sandwiched PCBM layer is also used between the perovskite and TiO₂ layers to improve the interfacial contact. By using these two methods, the fabricated perovskite solar cells show a low hysteresis effect and high current density, which result from the improved compactness at the grain boundaries of the perovskite surface and the interface between the TiO₂/perovskite layers. The theoretical and experimental results indicate that PCBM can effectively suppress carrier recombination, regardless of the interfacial layer or dopant. We also found that the dark current reduced during the analysis of dark state current–voltage (I–V) characteristics. The slopes of the I–V curves for the fluorine-doped tin oxide/PCBM-doped perovskite/Au device reduce monotonically with the increase in the PCBM concentration from 0.01 to 0.1 wt %, which suggest the decreasing defects in the perovskite layer. By tuning the PCBM doping and controlling the preparation process, we have successfully fabricated a planar TiO₂/PCBM-based PCBM-doped perovskite photovoltaic device that reaches a high current density of 22.6 mA/cm² and an outstanding photoelectric conversion efficiency up to 18.3%. The controllability of the PCBM doping concentration and interfacial preparation shed light on further optimization of the photoelectric conversion efficiency of perovskite solar cells.

更新日期：2018-07-03

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