Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device,ACS Applied Materials & Interfaces

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Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-07-03 00:00:00 , DOI: 10.1021/acsami.8b07079
Shuaipeng Ge ₁ , Yuhang Wang ₂ , Zhongcheng Xiang ₁ , Yimin Cui ₁

Affiliation

All-inorganic CsPb_1–xBi_xI₃ perovskite film was successfully fabricated by incorporating Bi³⁺ in CsPbI₃ to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb_1–xBi_xI₃/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb_1–xBi_xI₃/ITO device potential application for multilevel data storage in a nonvolatile memory device.

中文翻译：

基于CsPb _{1– x} Bi _x I ₃钙钛矿的存储器件中的复位电压相关多级电阻开关行为

通过在CsPbI _3中掺入Bi ³⁺来稳定立方晶格，成功制备了全无机CsPb ₁ – _x Bi _x I ₃钙钛矿薄膜。此外，钙钛矿薄膜被用于制造简单的Ag / CsPb _1–_x Bi _x I ₃氧化铟锡（ITO）存储器具有双极电阻切换行为。通过在完全露天条件下的保持和耐久测试证明了其非易失性，可靠和可复制的开关性能。该存储器件还呈现出高度均匀和长期稳定的特性。重要的是，通过调制复位停止电压，首次在卤化钙钛矿型钙钛矿存储设备中观察到多级高电阻状态。提出了电阻开关行为来解释导电复丝的形成和部分断裂，这些复丝主要受钙离子膜中碘离子的迁移及其相应的空位的影响。这项研究表明，Ag / CsPb _{1– x} Bi _x I ₃/ ITO设备在非易失性存储设备中进行多级数据存储的潜在应用。

更新日期：2018-07-03

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