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Strain-Gated Field Effect Transistor of a MoS2–ZnO 2D–1D Hybrid Structure
ACS Nano ( IF 15.8 ) Pub Date : 2015-12-29 00:00:00 , DOI: 10.1021/acsnano.5b07121 Libo Chen 1 , Fei Xue 1 , Xiaohui Li 1 , Xin Huang 1 , Longfei Wang 1 , Jinzong Kou 1 , Zhong Lin Wang 1, 2
ACS Nano ( IF 15.8 ) Pub Date : 2015-12-29 00:00:00 , DOI: 10.1021/acsnano.5b07121 Libo Chen 1 , Fei Xue 1 , Xiaohui Li 1 , Xin Huang 1 , Longfei Wang 1 , Jinzong Kou 1 , Zhong Lin Wang 1, 2
Affiliation
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Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2–1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source–drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source–drain current can be tuned for ∼25%, equivalent to the results of applying an extra −5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.
中文翻译：
MoS 2 -ZnO 2D-1D混合结构的应变门控场效应晶体管
二维（2D）二硫化钼（MoS 2）是一种令人兴奋的材料，因为它具有独特的电，光和压电特性。由于本征带隙为1.2–1.9 eV，因此单层或少量的MoS 2用于制造具有高电子迁移率和开/关比的场效应晶体管（FET）。但是，传统的FET受外部提供的栅极电压控制，栅极电压可能不够灵敏，无法直接与机械刺激物对接，以用于电子皮肤。在这里，我们基于2D MoS 2的混合结构报告一种类型的顶部压力/力门控场效应晶体管（PGFET）薄片和一维ZnO纳米线（NW）阵列。施加外部压力后，在MoS 2上生长的ZnO NW尖端产生的压电极化电荷将充当栅极电压，以调节/控制MoS 2中的源漏传输特性。在封装器件上施加6.25 MPa的刺激后，源极-漏极电流可调谐至〜25％，这相当于施加额外的-5 V背栅电压的结果。在MoS 2和ZnO之间夹有介电层（Al 2 O 3）的另一类PGFET也显示出一致的结果。提出了一个理论模型来解释接收到的数据。这项研究为在人工智能领域应用基于2D材料的FET奠定了基础。
更新日期：2015-12-29
中文翻译：
MoS 2 -ZnO 2D-1D混合结构的应变门控场效应晶体管
二维（2D）二硫化钼（MoS 2）是一种令人兴奋的材料，因为它具有独特的电，光和压电特性。由于本征带隙为1.2–1.9 eV，因此单层或少量的MoS 2用于制造具有高电子迁移率和开/关比的场效应晶体管（FET）。但是，传统的FET受外部提供的栅极电压控制，栅极电压可能不够灵敏，无法直接与机械刺激物对接，以用于电子皮肤。在这里，我们基于2D MoS 2的混合结构报告一种类型的顶部压力/力门控场效应晶体管（PGFET）薄片和一维ZnO纳米线（NW）阵列。施加外部压力后，在MoS 2上生长的ZnO NW尖端产生的压电极化电荷将充当栅极电压，以调节/控制MoS 2中的源漏传输特性。在封装器件上施加6.25 MPa的刺激后，源极-漏极电流可调谐至〜25％，这相当于施加额外的-5 V背栅电压的结果。在MoS 2和ZnO之间夹有介电层（Al 2 O 3）的另一类PGFET也显示出一致的结果。提出了一个理论模型来解释接收到的数据。这项研究为在人工智能领域应用基于2D材料的FET奠定了基础。
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