Interfacial Charge Behavior Modulation in Perovskite Quantum Dot‐Monolayer MoS2 0D‐2D Mixed‐Dimensional van der Waals Heterostructures,Advanced Functional Materials

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Interfacial Charge Behavior Modulation in Perovskite Quantum Dot‐Monolayer MoS2 0D‐2D Mixed‐Dimensional van der Waals Heterostructures
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-06-22 , DOI: 10.1002/adfm.201802015
Hualin Wu ₁ , Zhuo Kang ₁ , Zihan Zhang ₁ , Zheng Zhang ₁ , Haonan Si ₁ , Qingliang Liao ₁ , Suicai Zhang ₁ , Jing Wu ₁ , Xiankun Zhang ₁ , Yue Zhang _{1,

2}

Affiliation

Fundamental understanding of charge behavior inside heterostructures is of vital importance for advancing high‐performance optoelectronic applications. However, the charge behavior of 0D‐2D mixed‐dimensional van der Waals heterostructures (MvdWHs) in the photoexcited state remains elusive. In this work, an energy band alignment protocol is adopted to realize effective energy band structure engineering inside 0D‐2D MvdWHs of perovskite quantum dots and MoS₂ monolayer with precisely designed typical type I and type II heterostructures, respectively. A profile and in‐depth understanding of interfacial photoinduced charge behavior is determined from two opposite perspectives based on MvdWHs. Sufficient comparison of a series of optical characterization results, including Raman shift, quenched photoluminescence, visualized suppressed fluorescence intensity, and shortened fluorescence lifetime imaging, clearly verifies that interfacial charge behavior can be tailored by varying the band alignment in 0D‐2D MvdWHs. Furthermore, the photoresponse performance and the relatively stronger and weaker photogating effects of such MvdWH‐based phototransistors also demonstrate modulation of interfacial charge behavior in 0D‐2D MvdWHs via energy band structure engineering, which is still feasible for optoelectronic performance optimization. These results are expected to shed light on designing novel functional devices and advancing the development process of 0D‐2D MvdWHs in the foreseeable future.

中文翻译：

钙钛矿量子点单层MoS2 0D-2D混合维数范德华异质结构中的界面电荷行为调制

对异质结构内部电荷行为的基本了解对于推进高性能光电应用至关重要。但是，在光激发状态下0D-2D混合维范德华异质结构（MvdWHs）的电荷行为仍然难以捉摸。在这项工作中，采用能带对准协议在钙钛矿量子点和MoS _2的0D-2D MvdWHs内部实现有效的能带结构工程具有精确设计的典型I型和II型异质结构的单分子层。基于MvdWHs，从两个相反的角度确定了界面光感应电荷行为的概况和深入理解。对一系列光学表征结果的充分比较，包括拉曼位移，猝灭的光致发光，可视化的抑制荧光强度和缩短的荧光寿命成像，清楚地验证了可以通过改变0D-2D MvdWHs中的能带排列来定制界面电荷行为。此外，此类基于MvdWH的光电晶体管的光响应性能以及相对较强和较弱的光门控效应还通过能带结构工程证明了0D-2D MvdWHs中界面电荷行为的调节，这对于优化光电性能仍然是可行的。预期这些结果将有助于在可预见的将来设计新颖的功能设备并推进0D-2D MvdWH的开发过程。

更新日期：2018-06-22

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