Abstract The work describes the use of dielectric and ac complex impedance and modulus spectroscopy techniques to obtain the electrical parameters like electrical conductivity and activation energy of composite multiferroic having composition (x) PbTiO3 – (1-x) SrFe12O19; where x = 0.10, 0.30, 0.50 in the frequency range 10–1000 KHz over a temperature range of 30–550 °C. The coexistence of low dielectric constant region with high dielectric constant region results in Maxwell – Wagner (M-W) polarization in the composite. Complex impedance and modulus spectroscopic analysis indicated the presence of non-Debye type dielectric relaxation in the composites. The grain (Rg) and space charge polarization resistance (RSCP) decreases with increase in temperature providing convincing evidence that the electrical properties of composite are temperature as well as microstructure dependent. The ac conductivity of composite calculated from dielectric loss and it shows an increase with increasing temperature suggesting semiconductor behavior. The hopping rate and concentration of charge carriers was calculated using Almond and West formalism based on Jonscher's universal power law. The activation energy of the ion migration and conduction was determined from temperature dependence of the hopping rate and dc conductivity respectively. For all compositions, the activation energy of dc conductivity is greater than that of hopping; i.e., Ea > Em. The increase in drift mobility represents enhanced mobility of the charge carriers due to thermal activation.

中文翻译：

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温度和频率对钛酸铅和六铁酸锶复合多铁性化合物（PbTiO 3 – SrFe 12 O 19 ）电性能的影响

摘要 该工作描述了使用介电和交流复阻抗和模量光谱技术来获得具有成分 (x) PbTiO3 – (1-x) SrFe12O19 的复合多铁性化合物的电导率和活化能等电学参数。其中 x = 0.10、0.30、0.50，频率范围为 10-1000 KHz，温度范围为 30-550 °C。低介电常数区域与高介电常数区域的共存导致复合材料中的麦克斯韦-瓦格纳 (MW) 极化。复阻抗和模量光谱分析表明复合材料中存在非德拜型介电弛豫。晶粒 (Rg) 和空间电荷极化电阻 (RSCP) 随温度升高而降低，这提供了令人信服的证据，证明复合材料的电性能取决于温度和微观结构。从介电损耗计算的复合材料的交流电导率随温度升高而增加，表明半导体行为。使用基于 Jonscher 的通用幂律的 Almond 和 West 形式主义计算电荷载体的跳跃率和浓度。离子迁移和传导的活化能分别由跳跃率和直流电导率的温度依赖性确定。对于所有成分，直流电导的活化能都大于跳跃的活化能；即，Ea > Em。