High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication,ACS Applied Materials & Interfaces

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High-Performance Graphene/β-Ga2O3 Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-06-13 00:00:00 , DOI: 10.1021/acsami.8b05336
Richeng Lin ₁ , Wei Zheng ₁ , Dan Zhang ₁ , Zhaojun Zhang ₁ , Qixian Liao ₁ , Lu Yang ₁ , Feng Huang ₁

Affiliation

Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV detection and high-sensitivity and low-noise “sandwich” photodetector with large detective area is difficult to be fabricated because it is usually hard for traditional wide band gap semiconductors to boast both high conductivity and high SBUV transparency. Here, we proposed to use graphene as the transparent conductive layer to form graphene/β-Ga₂O₃ heterojunction. With the help of large-area graphene and hot carrier multiplication, a SBUV photodetector with large detective area, low dark current, and high sensitivity was successfully assembled. Its photoresponsivity is 1–3 orders of magnitude higher than that of the conventional SBUV photodetectors, and its response speed can rival the best device ever reported.

中文翻译：

高性能石墨烯/的β-Ga ₂ Ø ₃异质结深紫外探测器与热电子激发承运人乘法

日盲紫外线（SBUV）检测在无线安全通信，预警等方面具有重要的应用。但是，难以制造用于SBUV检测以及具有大检测面积的高灵敏度和低噪声“三明治”光电检测器的关键设备，因为传统的宽带隙半导体通常很难同时具有高电导率和高SBUV透明性。在这里，我们提出使用石墨烯作为透明导电层，以形成石墨烯/的β-Ga ₂ ö ₃异质结。借助大面积石墨烯和热载流子的倍增，成功组装了具有大检测面积，低暗电流和高灵敏度的SBUV光电探测器。它的光响应性比传统的SBUV光电探测器高1-3个数量级，并且其响应速度可以与有史以来最好的设备相媲美。

更新日期：2018-06-13

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