Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various α-Al2O3 Substrates,Crystal Growth & Design

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Mist Chemical Vapor Deposition of Single-Phase Metastable Rhombohedral Indium Tin Oxide Epitaxial Thin Films with High Electrical Conductivity and Transparency on Various α-Al2O3 Substrates
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2018-06-08 00:00:00 , DOI: 10.1021/acs.cgd.8b00387
Hiroyuki Nishinaka ₁ , Masahiro Yoshimoto ₁

Affiliation

Metastable rhombohedral-structured indium tin oxide (rh-ITO) epitaxial films were successfully grown on c-, a-, m-, and r-plane α-Al₂O₃ substrates with α-Fe₂O₃ buffer layers using mist chemical vapor deposition. X-ray diffraction measurements showed the growth of rh-ITO epitaxial films with various orientations on the correspondingly oriented substrates with buffer layers. The electron carrier concentrations of the rh-ITO reached (3.8–5.1) × 10²⁰ cm^–3 with Sn impurity doping. Optical transmittance tests showed that the rh-ITO thin films were highly transparent to visible light. The results suggested that the rh-ITO thin films featured both high electrical conductivity and high optical transparency. The band gaps and band gap shifts by the Burstein–Moss effect on the various α-Al₂O₃ substrates showed different orientation-dependent values. The demonstrated epitaxial rh-ITO thin films with various orientations permit the physical characterization of rare rh-ITO thin films.

中文翻译：

单相亚稳菱面体的氧化铟锡薄外延具有高导电性和透明度的各种α-Al薄膜的雾化学气相沉积_2个ö _3个衬底

亚稳菱形结构的氧化铟锡（RH-ITO）外延膜，成功地生长在Ç - ，一- ，米-和- [R -平面的α-Al _2个ö ₃基板与的α-Fe ₂ ö ₃使用缓冲层雾化学气相沉积。X射线衍射测量表明，在具有缓冲层的相应取向的基底上，具有各种取向的rh-ITO外延膜的生长。rh-ITO的电子载流子浓度达到（3.8–5.1）×10 ²⁰ cm ^–3与锡杂质掺杂。透光率测试表明，rh-ITO薄膜对可见光高度透明。结果表明，rh-ITO薄膜既具有高电导率又具有高光学透明性。带隙和带隙的变化通过对各种的α-Al的伯斯坦-MOSS效果₂ ö ₃基板表现出不同的定向相关的值。所展示的具有各种取向的外延rh-ITO薄膜允许稀有rh-ITO薄膜的物理表征。

更新日期：2018-06-08

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