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Relating Photoelectrochemistry and Wettability of Sputtered Cu- and N-Doped TiO2 Thin Films via an Integrated Approach
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-06-06 00:00:00 , DOI: 10.1021/acs.jpcc.8b03650 Corrado Garlisi , Chia-Yun Lai , Leslie George , Matteo Chiesa 1 , Giovanni Palmisano
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-06-06 00:00:00 , DOI: 10.1021/acs.jpcc.8b03650 Corrado Garlisi , Chia-Yun Lai , Leslie George , Matteo Chiesa 1 , Giovanni Palmisano
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We present here an integrated study of the photoelectrochemical and hydrophilic properties of sputtered TiO2 thin films, enhanced by means of nitrogen (N) and copper (Cu) doping. We investigated the effect that doping has on both photoelectrochemical efficiency and surface properties by employing a variety of techniques spanning from impedance electrochemical impedance spectroscopy to static contact angle and atomic force microscope (AFM) force spectroscopy before and after UV irradiation through a comprehensive approach able to connect photelectrochemical and hydrophilic performance. Namely, Cu doping was observed to worsen TiO2 photoelectrochemical efficiency, unlike N-doping, which instead improved it, whereas both doping enhanced the surface chemistry. Both doping resulted in anodic shift of the flat band potential and in an increase in the donor density with the occurrence of surface defects beneficial for the separation of charge carriers in N–TiO2 on one side, and more recombination centers in Cu–TiO2 on the other. On the other hand, macroscopic wettability characterization indicated that Cu–TiO2 and N–TiO2 had a much lower contact angle than TiO2 (static contact angle ≈ 20 and 10° for Cu-doped and N-doped films, respectively, as compared to 50° in the bare film) and became superhydrophilic after UV irradiation; AFM corroborated the contact angle data, pointing out that the enhanced hydrophilicity in doped films can be ascribed to an alteration in the surface chemistry because of a greater number of surface defects, such as oxygen vacancies, acting as binding sites for water molecules.
中文翻译：
通过集成方法研究溅射的Cu和N掺杂的TiO 2薄膜的光电化学和润湿性
我们在这里介绍了通过氮（N）和铜（Cu）掺杂增强的溅射TiO 2薄膜的光电化学和亲水性能的综合研究。我们通过多种方法研究了掺杂对光电化学效率和表面性能的影响，这些技术涵盖了从阻抗电化学阻抗谱到静态接触角以及原子力显微镜（AFM）力谱等多种技术，这些技术可以通过多种方法来进行紫外线照射前后的紫外线照射。连接光电化学和亲水性能。即，观察到Cu掺杂使TiO 2变差。与N掺杂不同，光电化学效率提高了它，而两种掺杂都增强了表面化学性能。两种掺杂都导致平带电势的阳极移动和施主密度的增加，同时表面缺陷的出现有利于一侧N-TiO 2中电荷载流子的分离，以及Cu-TiO 2中更多的复合中心在另一。另一方面，宏观润湿性表征表明Cu-TiO 2和N-TiO 2的接触角比TiO 2小得多。（对于Cu掺杂和N掺杂的薄膜，静态接触角分别约为20°和10°，而裸膜的静态接触角约为50°），并且在UV辐射后变得超亲水性；AFM证实了接触角数据，指出掺杂膜中增强的亲水性可以归因于表面化学的变化，因为大量的表面缺陷（例如氧空位）充当了水分子的结合位点。
更新日期：2018-06-06
中文翻译：
通过集成方法研究溅射的Cu和N掺杂的TiO 2薄膜的光电化学和润湿性
我们在这里介绍了通过氮（N）和铜（Cu）掺杂增强的溅射TiO 2薄膜的光电化学和亲水性能的综合研究。我们通过多种方法研究了掺杂对光电化学效率和表面性能的影响，这些技术涵盖了从阻抗电化学阻抗谱到静态接触角以及原子力显微镜（AFM）力谱等多种技术，这些技术可以通过多种方法来进行紫外线照射前后的紫外线照射。连接光电化学和亲水性能。即，观察到Cu掺杂使TiO 2变差。与N掺杂不同，光电化学效率提高了它，而两种掺杂都增强了表面化学性能。两种掺杂都导致平带电势的阳极移动和施主密度的增加，同时表面缺陷的出现有利于一侧N-TiO 2中电荷载流子的分离，以及Cu-TiO 2中更多的复合中心在另一。另一方面，宏观润湿性表征表明Cu-TiO 2和N-TiO 2的接触角比TiO 2小得多。（对于Cu掺杂和N掺杂的薄膜，静态接触角分别约为20°和10°，而裸膜的静态接触角约为50°），并且在UV辐射后变得超亲水性；AFM证实了接触角数据，指出掺杂膜中增强的亲水性可以归因于表面化学的变化，因为大量的表面缺陷（例如氧空位）充当了水分子的结合位点。
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