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Twin Crystal induced Near Zero Thermal Expansion in SnO2 Nanowires
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2018-06-05 , DOI: 10.1021/jacs.8b03232 He Zhu 1 , Qiang Li 1 , Chao Yang 2 , Qinghua Zhang 3 , Yang Ren 4 , Qilong Gao 1 , Na Wang 1 , Kun Lin 1 , Jinxia Deng 1 , Jun Chen 1 , Lin Gu 3 , Jiawang Hong 2 , Xianran Xing 1
Journal of the American Chemical Society ( IF 14.4 ) Pub Date : 2018-06-05 , DOI: 10.1021/jacs.8b03232 He Zhu 1 , Qiang Li 1 , Chao Yang 2 , Qinghua Zhang 3 , Yang Ren 4 , Qilong Gao 1 , Na Wang 1 , Kun Lin 1 , Jinxia Deng 1 , Jun Chen 1 , Lin Gu 3 , Jiawang Hong 2 , Xianran Xing 1
Affiliation
Knowledge of controllable thermal expansion is a fundamental issue in the field of materials science and engineering. Direct blocking of the thermal expansions in positive thermal expansion materials is a challenging but fascinating task. Here we report a near zero thermal expansion (ZTE) of SnO2 achieved from twin crystal nanowires, which is highly correlated to the twin boundaries. Local structural evolutions followed by pair distribution function revealed a remarkable thermal local distortion along the twin boundary. Lattice dynamics investigated by Raman scattering evidenced the hardening of phonon frequency induced by the twin crystal compressing, giving rise to the ZTE of SnO2 nanowires. Further DFT calculation of Grüneisen parameters confirms the key role of compressive stress on ZTE. Our results provide an insight into the thermal expansion behavior regarding to twin crystal boundaries, which could be beneficial to the applications.
中文翻译:
双晶在 SnO2 纳米线中引起近零热膨胀
可控热膨胀的知识是材料科学与工程领域的一个基本问题。直接阻止正热膨胀材料中的热膨胀是一项具有挑战性但引人入胜的任务。在这里,我们报告了从双晶纳米线获得的 SnO2 接近零的热膨胀 (ZTE),这与孪晶边界高度相关。局部结构演化以及对分布函数揭示了沿孪晶边界的显着热局部变形。通过拉曼散射研究的晶格动力学证明了由双晶压缩引起的声子频率的硬化,从而产生了 SnO2 纳米线的 ZTE。Grüneisen 参数的进一步 DFT 计算证实了压缩应力对中兴通讯的关键作用。
更新日期:2018-06-05
中文翻译:
双晶在 SnO2 纳米线中引起近零热膨胀
可控热膨胀的知识是材料科学与工程领域的一个基本问题。直接阻止正热膨胀材料中的热膨胀是一项具有挑战性但引人入胜的任务。在这里,我们报告了从双晶纳米线获得的 SnO2 接近零的热膨胀 (ZTE),这与孪晶边界高度相关。局部结构演化以及对分布函数揭示了沿孪晶边界的显着热局部变形。通过拉曼散射研究的晶格动力学证明了由双晶压缩引起的声子频率的硬化,从而产生了 SnO2 纳米线的 ZTE。Grüneisen 参数的进一步 DFT 计算证实了压缩应力对中兴通讯的关键作用。