Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition,Advanced Materials Interfaces

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Wafer‐Scale Epitaxial 1T′, 1T′–2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal–Organic Chemical Vapor Deposition
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-06-04 , DOI: 10.1002/admi.201800439
TaeWan Kim ₁ , Hyeji Park _{1,

2} , DaeHwa Joung _{1,

3} , DongHwan Kim _{1,

4} , Rochelle Lee ₄ , Chae Ho Shin _{1,

5} , Mangesh Diware ₁ , Won Chegal ₁ , Soo Hwan Jeong ₂ , Jae Cheol Shin ₄ , Jonghoo Park ₃ , Sang-Woo Kang _{1,

6}

Affiliation

2D materials beyond molybdenum disulfide such as molybdenum ditelluride (MoTe₂) have attracted increasing attention because of their distinctive properties, such as phase‐engineered, relatively narrow direct bandgap of 1.0–1.1 eV and superior carrier transport. However, a wafer‐scale synthesis process is required for achieving practical applications in next‐generation electronic devices using MoTe₂ thin films. Herein, the direct growth of atomically thin 1T′, 1T′–2H mixed, and 2H phases MoTe₂ films on a 4 in. SiO₂/Si wafer with high spatial uniformity (≈96%) via metal–organic vapor phase deposition is reported. Furthermore, the wafer‐scale phase engineering of few‐layer MoTe₂ film is investigated by controlling the H₂ molar flow rate. While the use of a low H₂ molar flow rate results in 1T′ and 1T′–2H mixed phase MoTe₂ films, 2H phase MoTe₂ films are obtained at a high H₂ molar flow rate. Field‐effect transistors fabricated with the prepared 2H and 1T′ phases MoTe₂ channels reveal p‐type semiconductor and semimetal properties, respectively. This work demonstrates the potential for reliable wafer‐scale production of 1T′ and 2H phases MoTe₂ thin films employing the H₂ molar flow rate‐controlled phase tunable method for practical applications in next‐generation electronic devices as a p‐type semiconductor and Wyle semimetal.

中文翻译：

金属有机化学气相沉积生长的晶圆级外延1T'，1T'–2H混合和2H相MoTe2薄膜

除二硫化钼以外的2D材料（如二碲化钼（MoTe ₂））因其独特的性能而受到越来越多的关注，例如相工程，相对窄的1.0–1.1 eV的直接带隙和出色的载流子传输。但是，为了在使用MoTe ₂薄膜的下一代电子设备中实现实际应用，需要晶圆级合成工艺。在此，通过金属有机气相沉积在具有高空间均匀性（约96％）的4英寸SiO ₂ / Si晶片上直接生长原子薄的1T'，1T'–2H混合和2H相MoTe ₂膜是报告。此外，几层MoTe ₂的晶圆级相工程通过控制H ₂摩尔流量研究薄膜。虽然使用低H ₂摩尔流量会产生1T'和1T'–2H混合相MoTe ₂膜，但在高H ₂摩尔流量下会获得2H相MoTe ₂膜。用准备好的2H和1T'相MoTe ₂通道制造的场效应晶体管分别显示出p型半导体和半金属特性。这项工作证明了利用H ₂可靠地晶圆级生产1T'和2H相MoTe ₂薄膜的潜力摩尔流量控制的相位可调方法在ap半导体和Wyle半金属等下一代电子设备中的实际应用。

更新日期：2018-06-04

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