HgSe / HgTe胶体异质结构中的波函数工程，以增强中红外光电导性能,Nano Letters

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HgSe / HgTe胶体异质结构中的波函数工程，以增强中红外光电导性能
Nano Letters ( IF 9.6 ) Pub Date : 2018-05-29 00:00:00 , DOI: 10.1021/acs.nanolett.8b01861
Nicolas Goubet _{1,

2} , Clément Livache _{1,

2} , Bertille Martinez _{1,

2} , Xiang Zhen Xu ₂ , Sandrine Ithurria ₂ , Sébastien Royer ₁ , Hervé Cruguel ₁ , Gilles Patriarche ₃ , Abdelkarim Ouerghi ₃ , Mathieu Silly ₄ , Benoit Dubertret ₂ , Emmanuel Lhuillier ₁

Affiliation

带内过渡的使用是设计中红外范围内的光学活性复合胶体材料的一种有趣的替代途径。但是，到目前为止，在相同波长下工作的窄带隙材料中，基于带内跃迁的光电检测所获得的性能仍远小于依赖于带间跃迁的性能。必须开发新的策略以使带内材料更有效。在这里，我们建议增加HgSe / HgTe的异质结构，作为实现增强的基于带内的光电导的一种手段。我们首先解决在柔软的（基于汞的）材料上生长异质结构的综合挑战。然后使用数值模拟，红外光谱，传输测量和光发射的组合研究生长的异质结构的电子光谱。我们报告了一种II型能带对准，与仅使用核的物体相比，掺杂减少了，空穴传导增强了。最后，我们使用高功率密度量子级联激光器探测异质结构的光电导特性，同时共振激发带内跃迁。与上一代基于纯核的HgSe的材料相比，异质结构具有更低的暗电流，更强的温度依赖性，更快的光响应（时间响应低于50μs），检测率提高了30倍。

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Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties

The use of intraband transition is an interesting alternative path for the design of optically active complex colloidal materials in the mid-infrared range. However, so far, the performance obtained for photodetection based on intraband transition remains much smaller than the one relying on interband transition in narrow-band-gap materials operating at the same wavelength. New strategies have to be developed to make intraband materials more effective. Here, we propose growing a heterostructure of HgSe/HgTe as a means of achieving enhanced intraband-based photoconduction. We first tackle the synthetic challenge of growing a heterostructure on soft (Hg-based) material. The electronic spectrum of the grown heterostructure is then investigated using a combination of numerical simulation, infrared spectroscopy, transport measurement, and photoemission. We report a type-II band alignment with reduced doping compared with a core-only object and boosted hole conduction. Finally, we probe the photoconductive properties of the heterostructure while resonantly exciting the intraband transition by using a high-power-density quantum cascade laser. Compared to the previous generation of material based on core-only HgSe, the heterostructures have a lower dark current, stronger temperature dependence, faster photoresponse (with a time response below 50 μs), and detectivity increased by a factor of 30.

更新日期：2018-05-29

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