Abstract Thickness controllable SiO2 film was prepared on γ-TiAl alloy by cathodic electrodeposition. The oxidation behaviour of the specimens at 900 °C was studied. The effects of SiO2 electrodeposition parameters, such as electrolysis time and deposition current density, on the morphology, structure and high temperature oxidation performance of the film were investigated. Results shown during thermal oxidation, the electrodeposited SiO2 film could react with the TiAl alloy to form an alumina- and silicon-enriched glass-like oxide scale, which can prevent the inward diffusion of oxygen from air to the film/alloy interface, resulting in the remarkable decreased oxidation rate of the alloy.

中文翻译：

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电沉积SiO 2 膜增强γ-TiAl合金的高温抗氧化性

摘要 采用阴极电沉积法在γ-TiAl合金上制备了厚度可控的SiO2薄膜。研究了样品在 900 °C 下的氧化行为。考察了电解时间、沉积电流密度等SiO2电沉积参数对薄膜形貌、结构和高温氧化性能的影响。结果表明，在热氧化过程中，电沉积的 SiO2 薄膜可以与 TiAl 合金反应形成富含氧化铝和硅的玻璃状氧化皮，这可以防止氧气从空气向内扩散到薄膜/合金界面，导致合金的氧化速率显着降低。