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Memory Devices: In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device (Adv. Mater. 47/2015)
Advanced Materials ( IF 27.4 ) Pub Date : 2015-12-10 , DOI: 10.1002/adma.201570323
He Tian,Haiming Zhao,Xue-Feng Wang,Qian-Yi Xie,Hong-Yu Chen,Mohammad Ali Mohammad,Cheng Li,Wen-Tian Mi,Zhi Bie,Chao-Hui Yeh,Yi Yang,H.-S. Philip Wong,Po-Wen Chiu,Tian-Ling Ren

On page 7767, H.‐S. P. Wong, P.‐W. Chiu, T.‐L. Ren, and co‐workers demonstrate a resistive random access memory (RRAM) device with a tunable switching window. The SET voltage can be continuously tuned over a wide range by electrical gating. The gate‐controlled bilayer graphene‐electrode RRAM can function as 1D1R to potentially increase the RRAM density.
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中文翻译:

存储设备:栅控双层石墨烯-电极电阻存储设备中的切换窗口的原位调整(Adv。Mater。47/2015)

在第7767页上,H.-SP Wong,P.-W. Chiu T.-L. Ren和他的同事演示了具有可调切换窗口的电阻式随机存取存储器(RRAM)设备。SET电压可以通过电气门控在很宽的范围内连续调节。栅极控制的双层石墨烯电极RRAM可以用作1D1R,以潜在地增加RRAM密度。
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更新日期:2015-12-10
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