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Surface‐Passivated Cesium Lead Halide Perovskite Quantum Dots: Toward Efficient Light‐Emitting Diodes with an Inverted Sandwich Structure
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-05-06 , DOI: 10.1002/adom.201800007
Weiwei Chen 1 , Xiaosheng Tang 1 , Peihua Wangyang 2 , Zhiqiang Yao 3 , Dan Zhou 4 , Fenggui Chen 4 , Shiqi Li 1 , Hao Lin 1 , Fanju Zeng 1 , Daofu Wu 1 , Kuan Sun 5 , Meng Li 5 , Yi Huang 6 , Wei Hu 1 , Zhigang Zang 1 , Juan Du 7
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-05-06 , DOI: 10.1002/adom.201800007
Weiwei Chen 1 , Xiaosheng Tang 1 , Peihua Wangyang 2 , Zhiqiang Yao 3 , Dan Zhou 4 , Fenggui Chen 4 , Shiqi Li 1 , Hao Lin 1 , Fanju Zeng 1 , Daofu Wu 1 , Kuan Sun 5 , Meng Li 5 , Yi Huang 6 , Wei Hu 1 , Zhigang Zang 1 , Juan Du 7
Affiliation
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In recent years, metal‐halide perovskite quantum dots (QDs) have been broadly applied in optoelectronic fields due to their fascinating characteristics, such as high photoluminescence quantum yields, tunable bandgaps, and low‐cost solution processing. Here, a facile ligand‐exchange strategy is employed for the fabrication of CsPbBr3 QDs capped with di‐dodecyl dimethyl ammonium bromide. It is demonstrated that the treated QDs' film becomes more compact with higher electron mobility and shorter lifetime. Besides, a reduced conduction band minimum value (0.28 eV) of perovskite QDs' film provides an efficient electron injection to them from ZnO nanoparticles. Through using the well‐passivated QDs' film, electroluminescence QD light‐emitting diode (QLED) devices with an indium tin oxide/ZnO/CsPbBr3 QDs/MoO3/4, 4′‐bis(carbazole‐9‐yl)biphenyl/Al inverted sandwich structure are achieved. The as‐prepared QLED device exhibits a maximum current efficiency of 0.62 cd A−1 and an external quantum efficiency of 0.58%, which is nearly nine times higher than that of the device based on unmodified QDs. More importantly, the stability testing results demonstrate that the QLED can be operated for more than 20 min under ambient conditions without any encapsulation. This provides an alternative route for highly efficient perovskite‐based LED with inverted sandwich structures.
中文翻译：
表面钝化铯铅钙钛矿量子点：形成具有倒三明治结构的高效发光二极管
近年来，金属卤化物钙钛矿量子点（QD）由于其引人入胜的特性（例如高的光致发光量子产率，可调节的带隙和低成本的溶液处理）而被广泛应用于光电子领域。在此，采用了一种简便的配体交换策略来制备由二十二烷基二甲基溴化铵封端的CsPbBr 3 QD。结果表明，经过处理的QDs薄膜变得更致密，具有更高的电子迁移率和更短的寿命。此外，降低的钙钛矿量子点薄膜的导带最小值（0.28 eV）为ZnO纳米粒子提供了有效的电子注入。通过使用钝化良好的QD薄膜，可将具有铟锡氧化物/ ZnO / CsPbBr 3的电致发光QD发光二极管（QLED）器件获得了QDs / MoO 3 /4，4'-双（咔唑-9-基）联苯/ Al反向三明治结构。所准备的QLED器件具有0.62 cd A -1的最大电流效率和0.58％的外部量子效率，这几乎是基于未经修改的QD的器件的9倍。更重要的是，稳定性测试结果表明QLED可以在环境条件下运行20分钟以上而无需任何封装。这为具有倒置三明治结构的高效钙钛矿型LED提供了另一种方法。
更新日期：2018-05-06
中文翻译：
表面钝化铯铅钙钛矿量子点：形成具有倒三明治结构的高效发光二极管
近年来，金属卤化物钙钛矿量子点（QD）由于其引人入胜的特性（例如高的光致发光量子产率，可调节的带隙和低成本的溶液处理）而被广泛应用于光电子领域。在此，采用了一种简便的配体交换策略来制备由二十二烷基二甲基溴化铵封端的CsPbBr 3 QD。结果表明，经过处理的QDs薄膜变得更致密，具有更高的电子迁移率和更短的寿命。此外，降低的钙钛矿量子点薄膜的导带最小值（0.28 eV）为ZnO纳米粒子提供了有效的电子注入。通过使用钝化良好的QD薄膜，可将具有铟锡氧化物/ ZnO / CsPbBr 3的电致发光QD发光二极管（QLED）器件获得了QDs / MoO 3 /4，4'-双（咔唑-9-基）联苯/ Al反向三明治结构。所准备的QLED器件具有0.62 cd A -1的最大电流效率和0.58％的外部量子效率，这几乎是基于未经修改的QD的器件的9倍。更重要的是，稳定性测试结果表明QLED可以在环境条件下运行20分钟以上而无需任何封装。这为具有倒置三明治结构的高效钙钛矿型LED提供了另一种方法。
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