Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures,Nano Letters

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Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures
Nano Letters ( IF 9.6 ) Pub Date : 2018-05-04 00:00:00 , DOI: 10.1021/acs.nanolett.8b00155
Yanpeng Liu _{1,

2} , Indra Yudhistira _{2,

3} , Ming Yang ₄ , Evan Laksono _{2,

3} , Yong Zheng Luo _{2,

3} , Jianyi Chen _{1,

2} , Junpeng Lu _{2,

3} , Yuan Ping Feng _{2,

3} , Shaffique Adam _{2,

3} , Kian Ping Loh _{1,

2}

Affiliation

There is a huge demand for magnetoresistance (MR) sensors with high sensitivity, low energy consumption, and room temperature operation. It is well-known that spatial charge inhomogeneity due to impurities or defects introduces mobility fluctuations in monolayer graphene and gives rise to MR in the presence of an externally applied magnetic field. However, to realize a MR sensor based on this effect is hampered by the difficulty in controlling the spatial distribution of impurities and the weak magnetoresistance effect at the monolayer regime. Here, we fabricate a highly stable monolayer graphene-on-black phosphorus (G/BP) heterostructure device that exhibits a giant MR of 775% at 9 T magnetic field and 300 K, exceeding by far the MR effects from devices made from either monolayer graphene or few-layer BP alone. The positive MR of the G/BP device decreases when the temperature is lowered, indicating a phonon-mediated process in addition to scattering by charge impurities. Moreover, a nonlocal MR of >10 000% is achieved for the G/BP device at room temperature due to an enhanced flavor Hall effect induced by the BP channel. Our results show that electron–phonon coupling between 2D material and a suitable substrate can be exploited to create giant MR effects in Dirac semimetals.

中文翻译：

石墨烯/黑色磷异质结构中声子介导的巨大磁阻

对于具有高灵敏度，低能耗和在室温下运行的磁阻（MR）传感器存在着巨大的需求。众所周知，由于杂质或缺陷导致的空间电荷不均匀性会在单层石墨烯中引入迁移率波动，并在存在外部施加的磁场的情况下引起MR。但是，由于难以控制杂质的空间分布以及在单层状态下的磁阻效应较弱，因此难以实现基于该效应的MR传感器。在这里，我们制造了一种高度稳定的单层黑磷烯石墨烯（G / BP）异质结构器件，该器件在9 T磁场和300 K时表现出的巨幅MR为775％，远远超过了任一单层器件的MR效应石墨烯或单层BP。当温度降低时，G / BP器件的正MR减小，这表明除由电荷杂质散射外，声子介导的过程。此外，由于BP通道引起的风味霍尔效应增强，因此在室温下G / BP设备的非本地MR达到10000％以上。我们的结果表明，可以利用2D材料与合适的衬底之间的电子-声子耦合在Dirac半金属中产生巨大的MR效应。

更新日期：2018-05-04

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