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Inversion Symmetry Broken 2D 3R‐MoTe2
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-04-25 , DOI: 10.1002/adfm.201800785
Dan Yang 1 , Xiaozong Hu 1 , Minghao Zhuang 2 , Yao Ding 2 , Shasha Zhou 1 , Aoju Li 1 , Yiwei Yu 1 , Huiqiao Li 1 , Zhengtang Luo 2 , Lin Gan 1 , Tianyou Zhai 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-04-25 , DOI: 10.1002/adfm.201800785
Dan Yang 1 , Xiaozong Hu 1 , Minghao Zhuang 2 , Yao Ding 2 , Shasha Zhou 1 , Aoju Li 1 , Yiwei Yu 1 , Huiqiao Li 1 , Zhengtang Luo 2 , Lin Gan 1 , Tianyou Zhai 1
Affiliation
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Inversion symmetry broken 3R phase semiconducting transition metal dichalcogenides (TMDC) have huge potential applications in many novel fields, such as valleytronics and nonlinear optics for the strong spin–orbit coupling and particularly the persistent noncentrosymmetric structure regardless the layer numbers, in stark contrast to the strict layer number requirement in other phases. Unfortunately, the fabrication of 3R phase TMDC is still a huge task to date. Molybdenum telluride (MoTe2) attracts increasing interest in recent years due to the easy transition between its various phases and its narrow bandgap close to silicon. However, the weak Mo–Te bond and the small energy imparity among phases make it a big challenge to obtain pure‐phase single crystalline MoTe2, especially; it is still a virgin land to obtain two‐dimensional (2D) 3R‐MoTe2. Here, by rational controlling the deposition temperature and tellurization velocity, for the first time high quality 2D 3R‐MoTe2 flakes are synthesized via chemical vapor deposition from a MoCl5 precursor. Scanning transmission electron microscopy unambiguously reveals the 3R stacking mode of as‐synthesized MoTe2. Second harmonic generation measurement confirms the excellent odd/even layer‐independent frequency conversion efficiency. Besides, the outstanding intrinsic infrared detection ability of as‐synthesized 3R‐MoTe2 is demonstrated as well.
中文翻译：
反对称对称性损坏的2D 3R‐MoTe2
反转对称破碎的3R相半导体过渡金属双金属二硫化物（TMDC）在许多新领域具有巨大的潜在应用，例如强电子自旋轨道耦合的谷电子学和非线性光学，尤其是持久的非中心对称结构，无论层数如何，都与之形成鲜明对比。其他阶段对层数有严格的要求。不幸的是，迄今为止，制造3R相TMDC仍然是一项艰巨的任务。碲化钼（MoTe 2）近年来吸引了越来越多的关注，这是由于其各个相之间的容易过渡以及靠近硅的窄带隙。然而，弱的Mo-Te键和相间的能量贫乏使获得纯相单晶MoTe 2成为一个巨大的挑战。， 尤其; 获得二维（2D）3R-MoTe 2仍然是处女地。在这里，通过合理地控制沉积温度和碲化速度，首次通过化学气相沉积法从MoCl 5前体中合成了高质量的2D 3R-MoTe 2薄片。扫描透射电子显微镜清楚地显示了合成的MoTe 2的3R堆叠模式。二次谐波生成测量结果证明了出色的奇数/偶数层独立频率转换效率。此外，还展示了合成的3R-MoTe 2出色的固有红外检测能力。
更新日期：2018-04-25
中文翻译：
反对称对称性损坏的2D 3R‐MoTe2
反转对称破碎的3R相半导体过渡金属双金属二硫化物（TMDC）在许多新领域具有巨大的潜在应用，例如强电子自旋轨道耦合的谷电子学和非线性光学，尤其是持久的非中心对称结构，无论层数如何，都与之形成鲜明对比。其他阶段对层数有严格的要求。不幸的是，迄今为止，制造3R相TMDC仍然是一项艰巨的任务。碲化钼（MoTe 2）近年来吸引了越来越多的关注，这是由于其各个相之间的容易过渡以及靠近硅的窄带隙。然而，弱的Mo-Te键和相间的能量贫乏使获得纯相单晶MoTe 2成为一个巨大的挑战。， 尤其; 获得二维（2D）3R-MoTe 2仍然是处女地。在这里，通过合理地控制沉积温度和碲化速度，首次通过化学气相沉积法从MoCl 5前体中合成了高质量的2D 3R-MoTe 2薄片。扫描透射电子显微镜清楚地显示了合成的MoTe 2的3R堆叠模式。二次谐波生成测量结果证明了出色的奇数/偶数层独立频率转换效率。此外，还展示了合成的3R-MoTe 2出色的固有红外检测能力。
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