Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices,Advanced Functional Materials

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Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2015-11-19 , DOI: 10.1002/adfm.201503493
Qijian Zhang ₁ , Jinghui He ₁ , Hao Zhuang ₁ , Hua Li ₁ , Najun Li ₁ , Qingfeng Xu ₁ , Dongyun Chen ₁ , Jianmei Lu ₁

Affiliation

Organic small‐molecule‐based devices with multilevel electroresistive memory behaviors have attracted more and more attentions due to their super‐high data‐storage density. However, up to now, only ternary memory molecules have been reported, and ternary storage devices may not be compatible with the binary computing systems perfectly. In this work, a donor–acceptor structured molecule containing three electron acceptors is rationally designed and the field‐induced charge‐transfer processes can occur from the donors. Organic quaternary memory devices based on this molecule are successfully demonstrated for the first time. The switching threshold voltages of the memory device are –2.04, –2.73, and –3.96 V, and the current ratio of the “0,” “1,” “2,” and “3” states is 1:10^1.78:10^3.47:10^5.36, which indicate a low possibility of read and write errors. The results represent a further step in organic high‐density data‐storage devices and will inspire the further study in this field.

中文翻译：

小分子的合理设计以实现有机第四元存储器件

具有多级电阻存储行为的有机小分子设备因其超高的数据存储密度而受到越来越多的关注。但是，到目前为止，仅报道了三元存储分子，并且三元存储设备可能无法与二进制计算系统完美兼容。在这项工作中，合理设计了包含三个电子受体的供体-受体结构分子，并且场诱导的电荷转移过程可能发生在供体上。首次成功证明了基于该分子的有机四元存储器件。存储设备的开关阈值电压为–2.04，–2.73和–3.96 V，“ 0”，“ 1，”，“ 2”和“ 3”状态的电流比为1:10 ^1.78：10 ^3.47：10^5.36，表明发生读写错误的可能性很小。结果代表了有机高密度数据存储设备的进一步发展，并将激发该领域的进一步研究。

更新日期：2015-11-19

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