Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2,Advanced Electronic Materials

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Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-03-24 , DOI: 10.1002/aelm.201700489
Min Hyuk Park ₁ , Ching-Chang Chung ₂ , Tony Schenk ₁ , Claudia Richter ₁ , Michael Hoffmann ₁ , Steffen Wirth ₃ , Jacob L. Jones ₂ , Thomas Mikolajick _{1,

4} , Uwe Schroeder ₁

Affiliation

The structural origin of the temperature‐dependent ferroelectricity in Si‐doped HfO₂ thin films is systematically examined. From temperature‐dependent polarization‐electric field measurements, it is shown that remanent polarization increases with decreasing temperature. Concurrently, grazing incidence X‐ray diffraction shows an increase in the orthorhombic phase fraction with decreasing temperature. The temperature‐dependent evolution of structural and ferroelectric properties is believed to be highly promising for the electrocaloric cooling application. Magnetization measurements do not provide any indication for a change of magnetization within the temperature range for the strong crystalline phase transition, suggesting that magnetic and structural properties are comparatively decoupled. The results are believed to provide the first direct proof of the strongly coupled evolution of structural and electrical properties with varying temperature in fluorite oxide ferroelectrics.

中文翻译：

掺Si HfO2中随温度变化的铁电的起源

掺Si HfO ₂中随温度变化的铁电的结构起源薄膜被系统地检查。从与温度相关的极化电场测量中可以看出，剩余极化随着温度的降低而增加。同时，掠入射X射线衍射显示正交晶体相分数随温度降低而增加。对于电热冷却应用，结构和铁电性能随温度的变化被认为是非常有前途的。磁化强度的测量并不能为强结晶相变温度范围内的磁化强度变化提供任何指示，这表明磁性和结构性能是相对去耦的。

更新日期：2018-03-24

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