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Pseudocapacitance contribution in boron-doped graphite sheets for anion storage enables high-performance sodium-ion capacitors†
Materials Horizons ( IF 12.2 ) Pub Date : 2018-03-23 00:00:00 , DOI: 10.1039/c8mh00156a Feng Yu 1, 2, 3, 4, 5 , Zaichun Liu 6, 7, 8, 9 , Renwu Zhou 1, 2, 3, 4, 5 , Deming Tan 10, 11, 12, 13 , Hongxia Wang 1, 2, 3, 4, 5 , Faxing Wang 10, 11, 12, 13
Materials Horizons ( IF 12.2 ) Pub Date : 2018-03-23 00:00:00 , DOI: 10.1039/c8mh00156a Feng Yu 1, 2, 3, 4, 5 , Zaichun Liu 6, 7, 8, 9 , Renwu Zhou 1, 2, 3, 4, 5 , Deming Tan 10, 11, 12, 13 , Hongxia Wang 1, 2, 3, 4, 5 , Faxing Wang 10, 11, 12, 13
Affiliation
Research on metal-ion hybrid capacitors is emerging as one of the hottest topics in energy storage fields because of their combination of high power and energy densities. To improve the sluggish faradaic reaction in traditional electrode materials for metal-ion hybrid capacitors, intercalation pseudocapacitive materials have been developed as attractive candidates. However, all the previously reported pseudocapacitances in intercalation/deintercalation reactions are based on cations (Li+, Na+, Zn2+etc.). In this work, we demonstrated the high pseudocapacitance contribution in boron-doped graphite (BG) sheets by taking advantage of anion storage. The BG electrode can reversibly store anions (PF6−) through both a surface-controlled pseudocapacitive reaction and a diffusion-limited intercalation/deintercalation reaction. The fabricated Na-ion hybrid capacitor with a BG cathode exhibits superior electrochemical performance. Density functional theory (DFT) calculation reveals that B-doping can significantly reduce the PF6− diffusion energy barrier in the graphite layers.
中文翻译:
硼掺杂石墨薄板中的伪电容的贡献可实现高性能钠离子电容器†
由于金属离子混合电容器的高功率和高能量密度的结合,因此正在成为储能领域最热门的主题之一。为了改善用于金属离子混合电容器的传统电极材料中缓慢的法拉第反应,已开发出插入伪电容材料作为有吸引力的候选物。然而,所有先前报道的插层/脱嵌反应中的假电容均基于阳离子(Li +,Na +,Zn 2+等)。在这项工作中,我们通过利用阴离子存储证明了掺硼石墨(BG)片材中的高假电容贡献。该BG电极可以可逆地吸留的阴离子(PF 6 -)通过表面控制的拟电容反应和扩散受限的插层/去插层反应。制成的带有BG阴极的Na离子混合电容器表现出优异的电化学性能。密度泛函理论(DFT)计算表明,B-掺杂可以显著降低PF 6 -的石墨层扩散的能量势垒。
更新日期:2018-03-23
中文翻译:
硼掺杂石墨薄板中的伪电容的贡献可实现高性能钠离子电容器†
由于金属离子混合电容器的高功率和高能量密度的结合,因此正在成为储能领域最热门的主题之一。为了改善用于金属离子混合电容器的传统电极材料中缓慢的法拉第反应,已开发出插入伪电容材料作为有吸引力的候选物。然而,所有先前报道的插层/脱嵌反应中的假电容均基于阳离子(Li +,Na +,Zn 2+等)。在这项工作中,我们通过利用阴离子存储证明了掺硼石墨(BG)片材中的高假电容贡献。该BG电极可以可逆地吸留的阴离子(PF 6 -)通过表面控制的拟电容反应和扩散受限的插层/去插层反应。制成的带有BG阴极的Na离子混合电容器表现出优异的电化学性能。密度泛函理论(DFT)计算表明,B-掺杂可以显著降低PF 6 -的石墨层扩散的能量势垒。