Bombarding Graphene with Oxygen Ions: Combining Effects of Incident Angle and Ion Energy To Control Defect Generation,The Journal of Physical Chemistry C

当前位置： X-MOL 学术 › J. Phys. Chem. C › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Bombarding Graphene with Oxygen Ions: Combining Effects of Incident Angle and Ion Energy To Control Defect Generation
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2015-11-16 00:00:00 , DOI: 10.1021/acs.jpcc.5b09620
Zhitong Bai ₁ , Lin Zhang ₁ , Ling Liu ₁

Affiliation

Ion bombardment is a key physical process in the ion implantation and irradiation of graphene, with important implications for tuning graphene’s electronic properties and for understanding the material’s behavior in irradiative environment. Using molecular dynamics with a reactive force field, this work systematically investigates the influence of the incident angle on the generation of defects and vacancies during the bombardment process. It is found that larger incident angles (between the incident line and the surface of graphene) ranging from 70° to 90° are desired for substitution and single vacancy, whereas smaller incident angles ranging from 30° to 50° are favored for forming double vacancies, multiple vacancies, and in-plane disorder. Oxygen ions with the incident angle of 70° produce the highest probability of ion substitution, and the ions at 40–60 eV and 70° yield the highest quality of doping with minimum other defects. These results demonstrate that bombarding graphene along oblique directions may be a promising approach to effectively and efficiently modify graphene for wide applications in nanoelectronics. The angle/energy-damage relationships developed by this study are expected to guide future efforts in ion implantation and to improve the understanding of various irradiation processes.

中文翻译：

用氧离子轰击石墨烯：入射角和离子能量的结合效应控制缺陷的产生

离子轰击是石墨烯离子注入和辐照的关键物理过程，对调节石墨烯的电子性能和理解材料在辐照环境下的行为具有重要意义。利用具有反作用力场的分子动力学，这项工作系统地研究了入射角对轰击过程中缺陷和空位的产生的影响。已经发现，对于取代和单空位而言，期望入射角在70°至90°之间（入射线与石墨烯的表面之间）更大，而对于形成双空位则期望在30°至50°范围内较小的入射角是有利的。，多个职位空缺和飞机失常。入射角为70°的氧离子产生离子取代的可能性最高，在40–60 eV和70°的离子产生的掺杂质量最高，其他缺陷最少。这些结果表明，沿倾斜方向轰击石墨烯可能是有效且高效地改性石墨烯以在纳米电子学中广泛应用的一种有前途的方法。预期该研究开发的角度/能量-损伤关系将指导离子注入的未来工作，并增进对各种辐照过程的理解。

更新日期：2015-11-16

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南