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Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics
ACS Nano ( IF 15.8 ) Pub Date : 2018-03-19 00:00:00 , DOI: 10.1021/acsnano.7b07689 Julien Chaste 1 , Amine Missaoui 1 , Si Huang 1 , Hugo Henck 1 , Zeineb Ben Aziza 1 , Laurence Ferlazzo 1 , Carl Naylor 2 , Adrian Balan 2 , Alan T. Charlie Johnson 2 , Rémy Braive 1, 3 , Abdelkarim Ouerghi 1
ACS Nano ( IF 15.8 ) Pub Date : 2018-03-19 00:00:00 , DOI: 10.1021/acsnano.7b07689 Julien Chaste 1 , Amine Missaoui 1 , Si Huang 1 , Hugo Henck 1 , Zeineb Ben Aziza 1 , Laurence Ferlazzo 1 , Carl Naylor 2 , Adrian Balan 2 , Alan T. Charlie Johnson 2 , Rémy Braive 1, 3 , Abdelkarim Ouerghi 1
Affiliation
Semiconducting two-dimensional (2D) materials, such as transition-metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, doping, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays. Using Raman and photoluminescence spectroscopy, we have been able to extract, separate, and simulate the different contributions on the nanoscale and to correlate these to the pillar array design. This control has been used to design a periodic MoS2 mechanical membrane with a high reproducibility and to perform optomechanical measurements on arrays of similar resonators with a high-quality factor of 600 at ambient temperature, hence opening the way to multiresonator applications with 2D materials. At the same time, this study constitutes a reference for the future development of well-controlled optical emissions within 2D materials on periodic arrays with reproducible behavior. We measured a strong reduction of the MoS2 band gap induced by the strain generated from the pillars. A transition from direct to indirect band gap was observed in isolated tent structures made of MoS2 and pinched by a pillar. In fully suspended devices, simulations were performed allowing both the extraction of the thermal conductance and doping of the layer. Using the correlation between the influences of strain and doping on the MoS2 Raman spectrum, we have developed a simple, elegant method to extract the local strain in suspended and nonsuspended parts of a membrane. This opens the way to experimenting with tunable coupling between light emission and vibration.
中文翻译:
用于纳米力学和光学的SiO 2 / Si柱阵列上悬浮MoS 2的本征性质
半导体二维(2D)材料,例如过渡金属二卤化物(TMD),正在纳米机械,光电和热传输领域兴起。在这些领域中的每一个领域,都必须对2D材料特性(包括应变,掺杂和加热)进行完美的控制,尤其是在纳米级。在这里,我们研究由悬浮在柱阵列上的单层MoS 2膜组成的清洁设备。使用拉曼光谱和光致发光光谱学,我们已经能够提取,分离和模拟纳米尺度上的不同贡献,并将它们与柱阵列设计相关联。此控件已用于设计周期性MoS 2机械膜具有很高的重现性,并且可以在环境温度下以600的高质量因数对类似谐振腔的阵列进行光机械测量,从而为使用2D材料的多谐振腔应用开辟了道路。同时,本研究为具有可重现行为的周期性阵列上2D材料中受良好控制的光发射的未来发展提供了参考。我们测量了由柱产生的应变引起的MoS 2带隙的强烈减小。在由MoS 2制成的孤立帐篷结构中观察到了从直接带隙到间接带隙的过渡并被支柱压住。在完全悬挂的器件中,进行了仿真,既允许提取热导又可以掺杂该层。利用应变和掺杂对MoS 2拉曼光谱的影响之间的相关性,我们开发了一种简单,优雅的方法来提取膜的悬浮和非悬浮部分中的局部应变。这为实验发光和振动之间的可调耦合开辟了道路。
更新日期:2018-03-19
中文翻译:
用于纳米力学和光学的SiO 2 / Si柱阵列上悬浮MoS 2的本征性质
半导体二维(2D)材料,例如过渡金属二卤化物(TMD),正在纳米机械,光电和热传输领域兴起。在这些领域中的每一个领域,都必须对2D材料特性(包括应变,掺杂和加热)进行完美的控制,尤其是在纳米级。在这里,我们研究由悬浮在柱阵列上的单层MoS 2膜组成的清洁设备。使用拉曼光谱和光致发光光谱学,我们已经能够提取,分离和模拟纳米尺度上的不同贡献,并将它们与柱阵列设计相关联。此控件已用于设计周期性MoS 2机械膜具有很高的重现性,并且可以在环境温度下以600的高质量因数对类似谐振腔的阵列进行光机械测量,从而为使用2D材料的多谐振腔应用开辟了道路。同时,本研究为具有可重现行为的周期性阵列上2D材料中受良好控制的光发射的未来发展提供了参考。我们测量了由柱产生的应变引起的MoS 2带隙的强烈减小。在由MoS 2制成的孤立帐篷结构中观察到了从直接带隙到间接带隙的过渡并被支柱压住。在完全悬挂的器件中,进行了仿真,既允许提取热导又可以掺杂该层。利用应变和掺杂对MoS 2拉曼光谱的影响之间的相关性,我们开发了一种简单,优雅的方法来提取膜的悬浮和非悬浮部分中的局部应变。这为实验发光和振动之间的可调耦合开辟了道路。