Controlled Synthesis of Layered Double Hydroxide Nanoplates Driven by Screw Dislocations,Nano Letters

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Controlled Synthesis of Layered Double Hydroxide Nanoplates Driven by Screw Dislocations
Nano Letters ( IF 9.6 ) Pub Date : 2015-04-20 00:00:00 , DOI: 10.1021/acs.nanolett.5b00758
Audrey Forticaux , Lianna Dang , Hanfeng Liang ₁ , Song Jin

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Layered double hydroxides (LDHs) are a family of two-dimensional (2D) materials with layered crystal structures that have found many applications. Common strategies to synthesize LDHs lead to a wide variety of morphologies, from discrete 2D nanosheets to nanoflowers. Here, we report a study of carefully controlled LDH nanoplate syntheses using zinc aluminum (ZnAl) and cobalt aluminum (CoAl) LDHs as examples and reveal their crystal growth to be driven by screw dislocations. By controlling and maintaining a low precursor supersaturation using a continuous flow reactor, individual LDH nanoplates with well-defined morphologies were synthesized on alumina-coated substrates, instead of the nanoflowers that result from uncontrolled overgrowth. The dislocation-driven growth was further established for LDH nanoplates directly synthesized using the respective metal salt precursors. Atomic force microscopy revealed screw dislocation growth spirals, and under transmission electron microscopy, thin CoAl LDH nanoplates displayed complex contrast contours indicative of strong lattice strain caused by dislocations. These results suggest the dislocation-driven mechanism is generally responsible for the growth of 2D LDH nanostructures, and likely other materials with layered crystal structures, which could help the rational synthesis of well-defined 2D nanomaterials with improved properties.

中文翻译：

螺旋位错驱动层状双氢氧化物纳米板的可控合成

层状双氢氧化物（LDH）是一类具有层状晶体结构的二维（2D）材料，已发现了许多应用。合成LDH的常见策略会导致各种各样的形态，从离散的2D纳米片到纳米花。在这里，我们报告了一个以锌铝（ZnAl）和钴铝（CoAl）LDH为示例的精心控制的LDH纳米板合成的研究，并揭示了它们的晶体生长是由螺丝位错驱动的。通过使用连续流反应器控制和维持较低的前驱体过饱和度，可以在氧化铝涂层的基材上合成具有明确形态的单个LDH纳米板，而不是由于不受控制的过度生长而产生的纳米花。对于使用相应的金属盐前体直接合成的LDH纳米板，进一步建立了位错驱动的生长。原子力显微镜显示螺丝位错生长呈螺旋状，在透射电子显微镜下，薄的CoAl LDH纳米板显示出复杂的对比轮廓，表明由位错引起的强晶格应变。这些结果表明，位错驱动机制通常是2D LDH纳米结构以及可能具有层状晶体结构的其他材料的生长的原因，这可能有助于合理合成具有改善的性能的定义明确的2D纳米材料。薄的CoAl LDH纳米板显示出复杂的对比度轮廓，表明由位错引起的强晶格应变。这些结果表明，位错驱动机制通常是2D LDH纳米结构以及可能具有层状晶体结构的其他材料的生长的原因，这可能有助于合理合成具有改善的性能的定义明确的2D纳米材料。薄的CoAl LDH纳米板显示出复杂的对比度轮廓，表明由位错引起的强晶格应变。这些结果表明，位错驱动机制通常是2D LDH纳米结构以及可能具有层状晶体结构的其他材料的生长的原因，这可能有助于合理合成具有改善的性能的定义明确的2D纳米材料。

更新日期：2015-04-20

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