<br>探究二维 WS2 层垂直取向纳米结构的起源和抑制。,ACS Applied Materials & Interfaces

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探究二维 WS2 层垂直取向纳米结构的起源和抑制。
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-12-27 , DOI: 10.1021/acsami.9b19716
Shashank Balasubramanyam ₁ , Matthew A Bloodgood ₁ , Mark van Ommeren ₁ , Tahsin Faraz ₁ , Vincent Vandalon ₁ , Wilhelmus M M Kessels ₁ , Marcel A Verheijen _{1,

2} , Ageeth A Bol ₁

Affiliation

WS2 等二维 (2D) 层状过渡金属二硫属化物 (TMD) 是纳米电子应用中很有前景的材料。然而，所需水平基面取向的 2D TMD 层的生长通常伴随着垂直纳米结构的生长，这会阻碍电荷传输，从而阻碍器件应用。在这项工作中，我们讨论了 WS2 等离子体增强原子层沉积 (PEALD) 过程中垂直纳米结构的形成和抑制。使用扫描透射电子显微镜研究，为两步（AB 型）PEALD 过程建立了垂直纳米结构的形成途径。晶界被认为是垂直纳米结构的主要形成中心。基于所获得的见解，我们引入了一种抑制垂直纳米结构生长的方法，其中在原来的两步法（AB型）中添加了一个额外的步骤（C）——化学惰性Ar等离子体或反应性H2等离子体。 PEALD 工艺。这种方法将垂直纳米结构密度降低了 80%。已证实垂直纳米结构的抑制与晶粒尺寸的增大密切相关。因此，垂直纳米结构密度的降低使薄膜电阻率降低了一个数量级。这项工作中获得的见解有助于设计除等离子体处理之外的其他途径，以抑制垂直纳米结构的生长并改善与纳米电子器件应用相关的 2D TMD 的材料性能。

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Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers.

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) such as WS2 are promising materials for nanoelectronic applications. However, growth of the desired horizontal basal-plane oriented 2D TMD layers is often accompanied by the growth of vertical nanostructures that can hinder charge transport and, consequently, hamper device application. In this work, we discuss both the formation and suppression of vertical nanostructures during plasma-enhanced atomic layer deposition (PEALD) of WS2. Using scanning transmission electron microscopy studies, formation pathways of vertical nanostructures are established for a two-step (AB-type) PEALD process. Grain boundaries are identified as the principal formation centers of vertical nanostructures. Based on the obtained insights, we introduce an approach to suppress the growth of vertical nanostructures, wherein an additional step (C)-a chemically inert Ar plasma or a reactive H2 plasma-is added to the original two-step (AB-type) PEALD process. This approach reduces the vertical nanostructure density by 80%. It was confirmed that suppression of vertical nanostructures goes hand in hand with grain size enhancement. The vertical nanostructure density reduction consequently lowers film resistivity by an order of magnitude. Insights obtained in this work can contribute toward devising additional pathways, besides plasma treatments, for suppressing the growth of vertical nanostructures and improving the material properties of 2D TMDs that are relevant for nanoelectronic device applications.

更新日期：2020-01-10

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