当前位置：
X-MOL 学术
›
Nano Lett.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device.
Nano Letters ( IF 9.6 ) Pub Date : 2019-12-17 , DOI: 10.1021/acs.nanolett.9b04555 Shuai Zhang 1 , Rui Wang 1, 2 , Xuepeng Wang 1 , Boyuan Wei 1 , Bo Chen 1 , Huaiqiang Wang 1 , Gang Shi 3 , Feng Wang 1 , Bin Jia 1 , Yiping Ouyang 1 , Faji Xie 1 , Fucong Fei 1 , Minhao Zhang 1 , Xuefeng Wang 4 , Di Wu 1 , Xiangang Wan 1 , Fengqi Song 1 , Haijun Zhang 1 , Baigeng Wang 1
Nano Letters ( IF 9.6 ) Pub Date : 2019-12-17 , DOI: 10.1021/acs.nanolett.9b04555 Shuai Zhang 1 , Rui Wang 1, 2 , Xuepeng Wang 1 , Boyuan Wei 1 , Bo Chen 1 , Huaiqiang Wang 1 , Gang Shi 3 , Feng Wang 1 , Bin Jia 1 , Yiping Ouyang 1 , Faji Xie 1 , Fucong Fei 1 , Minhao Zhang 1 , Xuefeng Wang 4 , Di Wu 1 , Xiangang Wan 1 , Fengqi Song 1 , Haijun Zhang 1 , Baigeng Wang 1
Affiliation
|
Magnetic topological insulator, a platform for realizing quantum anomalous Hall effect, axion state, and other novel quantum transport phenomena, has attracted a lot of interest. Recently, it is proposed that MnBi2Te4 is an intrinsic magnetic topological insulator, which may overcome the disadvantages in the magnetic doped topological insulator, such as disorder. Here we report on the gate-reserved anomalous Hall effect (AHE) in the MnBi2Te4 thin film. By tuning the Fermi level using the top/bottom gate, the AHE loop gradually decreases to zero and the sign is reversed. The positive AHE exhibits distinct coercive fields compared with the negative AHE. It reaches a maximum inside the gap of the Dirac cone, and its amplitude exhibits a linear scaling with the longitudinal conductance. The positive AHE is attributed to the competition of the intrinsic Berry curvature and the extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.
中文翻译：
本征磁拓扑绝缘子MnBi2Te4器件中异常霍尔效应的门控反转的实验观察。
磁性拓扑绝缘体是实现量子异常霍尔效应，轴态和其他新型量子传输现象的平台，引起了人们的极大兴趣。近年来，提出了MnBi 2 Te 4是本征磁性拓扑绝缘体，其可以克服磁性掺杂拓扑绝缘体中的无序等缺点。在这里，我们报道了MnBi2Te4薄膜中门保留的异常霍尔效应（AHE）。通过使用顶部/底部栅极调节费米能级，AHE环路逐渐减小到零，符号反转。与阴性AHE相比，阳性AHE表现出独特的矫顽场。它在狄拉克锥的间隙内达到最大值，并且其振幅与纵向电导呈线性比例关系。正AHE归因于内在Berry曲率和外在偏斜散射的竞争。其栅极控制的开关为拓扑自旋场效应晶体管提供了一种方案。
更新日期：2019-12-18
中文翻译：
本征磁拓扑绝缘子MnBi2Te4器件中异常霍尔效应的门控反转的实验观察。
磁性拓扑绝缘体是实现量子异常霍尔效应，轴态和其他新型量子传输现象的平台，引起了人们的极大兴趣。近年来，提出了MnBi 2 Te 4是本征磁性拓扑绝缘体，其可以克服磁性掺杂拓扑绝缘体中的无序等缺点。在这里，我们报道了MnBi2Te4薄膜中门保留的异常霍尔效应（AHE）。通过使用顶部/底部栅极调节费米能级，AHE环路逐渐减小到零，符号反转。与阴性AHE相比，阳性AHE表现出独特的矫顽场。它在狄拉克锥的间隙内达到最大值，并且其振幅与纵向电导呈线性比例关系。正AHE归因于内在Berry曲率和外在偏斜散射的竞争。其栅极控制的开关为拓扑自旋场效应晶体管提供了一种方案。
京公网安备 11010802027423号