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Mechanochemical Synthesis of Sn(II) and Sn(IV) Iodide Perovskites and Study of Their Structural, Chemical, Thermal, Optical, and Electrical Properties
Energy Technology ( IF 3.6 ) Pub Date : 2019-08-14 , DOI: 10.1002/ente.201900788
Yousra El Ajjouri 1 , Federico Locardi 2, 3 , María C. Gélvez-Rueda 4 , Mirko Prato 5 , Michele Sessolo 1 , Maurizio Ferretti 2 , Ferdinand C. Grozema 4 , Francisco Palazon 1, 3 , Henk J. Bolink 1
Affiliation  

Phase‐pure CsSnI3, FASnI3, Cs(PbSn)I3, FA(PbSn)I3 perovskites (FA = formamidinium = HC(NH2)2+) as well as the analogous so‐called vacancy‐ordered double perovskites Cs2SnI6 and FA2SnI6 are mechanochemically synthesized. The addition of SnF2 is found to be crucial for the synthesis of Cs‐containing perovskites but unnecessary for hybrid ones. All compounds show an absorption onset in the near‐infrared (NIR) region, which makes them especially relevant for photovoltaic applications. The addition of Pb(II) and SnF2 is crucial to improve the electronic properties in 3D Sn(II)‐based perovskites, in particular their charge carriers mobility (≈0.2 cm2 Vs−1) which is enhanced upon reduction of the dark carrier conductivity. Stokes‐shifted photoluminescence is observed on dry powders of Sn(II)‐based perovskites, which makes these materials promising for light‐emitting and sensing applications. Thermal stability of all compounds is examined, revealing no significant degradation up to at least 200 °C. This meets the requirements for standard operation conditions of most optoelectronic devices and is potentially compatible with thermal vacuum deposition of polycrystalline thin films.

中文翻译:

Sn(II)和Sn(IV)碘化物钙钛矿的机械化学合成及其结构,化学,热,光学和电性质的研究

纯相CsSnI 3,FASnI 3,Cs(PbSn)I 3,FA(PbSn)I 3钙钛矿(FA = Formamidinium = HC(NH 22 +)以及类似的所谓空位有序双钙钛矿Cs机械化学合成了2 SnI 6和FA 2 SnI 6。发现SnF 2的添加对于合成含Cs钙钛矿至关重要,而对于杂化钙钛矿则不必要。所有化合物在近红外(NIR)区域均显示出吸收开始,这使其特别适用于光伏应用。Pb(II)和SnF 2的添加对于改善基于3D Sn(II)的钙钛矿的电子性能至关重要,尤其是其电荷载流子迁移率(≈0.2cm 2  Vs -1),这种迁移率可通过降低暗载流子电导率来提高。在基于Sn(II)的钙钛矿的干粉上观察到斯托克斯位移的光致发光,这使这些材料有望用于发光和传感应用。检查了所有化合物的热稳定性,发现在至少200°C的温度下无明显降解。这符合大多数光电设备的标准操作条件的要求,并且可能与多晶薄膜的热真空沉积兼容。
更新日期:2020-04-03
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