Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In₂Se₃), is used as the channel material in the device. α-In₂Se₃ was chosen due to its appropriate bandgap, room-temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers and its potential for large-area growth. A passivation method based on the atomic layer deposition of aluminium oxide (Al₂O₃) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO₂) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 10⁸, a maximum on current of 862 μA μm⁻¹ and a low supply voltage.

铁电场效应晶体管采用铁电材料作为栅极绝缘体，可以使用器件的沟道电导来检测其极化状态。结果，这些设备有可能用于非易失性存储技术中，但是它们的保留时间短，这限制了它们的广泛应用。这里，我们报告，其中一个二维铁电体半导体，硒化铟（α-在铁电体半导体场效应晶体管₂硒₃），被用作该装置中的沟道材料。α-在₂硒₃选择它的原因是它具有适当的带隙，室温铁电，将铁电保持到几个原子层的能力以及其大面积生长的潜力。为了保护和增强晶体管的性能，开发了一种基于氧化铝（Al ₂ O ₃）原子层沉积的钝化方法。用15-nm厚的氧化铪（HfO ₂），其为经缩放的栅极电介质，所得到的设备提供高性能的具有大存储窗口，通/高离超过10比⁸，最大电流的862μA微米^{- 1}和低电源电压。