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Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction.
ACS Omega ( IF 3.7 ) Pub Date : 2019-11-22 , DOI: 10.1021/acsomega.9b03149 Hagyoul Bae 1 , Adam Charnas 1 , Xing Sun 1 , Jinhyun Noh 1 , Mengwei Si 1 , Wonil Chung 1 , Gang Qiu 1 , Xiao Lyu 1 , Sami Alghamdi 1 , Haiyan Wang 1 , Dmitry Zemlyanov 1 , Peide D Ye 1
ACS Omega ( IF 3.7 ) Pub Date : 2019-11-22 , DOI: 10.1021/acsomega.9b03149 Hagyoul Bae 1 , Adam Charnas 1 , Xing Sun 1 , Jinhyun Noh 1 , Mengwei Si 1 , Wonil Chung 1 , Gang Qiu 1 , Xiao Lyu 1 , Sami Alghamdi 1 , Haiyan Wang 1 , Dmitry Zemlyanov 1 , Peide D Ye 1
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Herein, we present a solar-blind ultraviolet photodetector realized using atomic layer-deposited p-type cuprous oxide (Cu2O) underneath a mechanically exfoliated n-type β-gallium oxide (β-Ga2O3) nanomembrane. The atomic layer deposition process of the Cu2O film applies bis(N,N'-di-secbutylacetamidinato)dicopper(I) [Cu(5Bu-Me-amd)]2 as a novel Cu precursor and water vapor as an oxidant. The exfoliated β-Ga2O3 nanomembrane was transferred to the top of the Cu2O layer surface to realize a unique oxide pn heterojunction, which is not easy to realize by conventional oxide epitaxy techniques. The current-voltage (I-V) characteristics of the fabricated pn heterojunction diode show the typical rectifying behavior. The fabricated Cu2O/β-Ga2O3 photodetector achieves sensitive detection of current at the picoampere scale in the reverse mode. This work provides a new approach to integrate all oxide heterojunctions using membrane transfer and bonding techniques, which goes beyond the limitation of conventional heteroepitaxy.
中文翻译：
基于原子层沉积的Cu2O和纳米膜β-Ga2O3pn氧化物异质结的日盲紫外光电探测器。
本文中，我们介绍了一种在机械剥离的n型β-氧化镓（β-Ga2O3）纳米膜下使用原子层沉积的p型氧化亚铜（Cu2O）实现的日盲紫外光探测器。Cu2O膜的原子层沉积过程使用双（N，N'-二-仲丁基乙酰胺基）二铜（I）[Cu（5Bu-Me-amd）] 2作为新型Cu前驱体，并使用水蒸气作为氧化剂。将剥离的β-Ga2O3纳米膜转移到Cu2O层表面的顶部，以实现独特的氧化物pn异质结，这是常规氧化物外延技术难以实现的。制成的pn异质结二极管的电流-电压（IV）特性显示出典型的整流行为。所制造的Cu2O /β-Ga2O3光电探测器以反向模式实现了皮安级电流的灵敏检测。
更新日期：2019-12-11
中文翻译：
基于原子层沉积的Cu2O和纳米膜β-Ga2O3pn氧化物异质结的日盲紫外光电探测器。
本文中，我们介绍了一种在机械剥离的n型β-氧化镓（β-Ga2O3）纳米膜下使用原子层沉积的p型氧化亚铜（Cu2O）实现的日盲紫外光探测器。Cu2O膜的原子层沉积过程使用双（N，N'-二-仲丁基乙酰胺基）二铜（I）[Cu（5Bu-Me-amd）] 2作为新型Cu前驱体，并使用水蒸气作为氧化剂。将剥离的β-Ga2O3纳米膜转移到Cu2O层表面的顶部，以实现独特的氧化物pn异质结，这是常规氧化物外延技术难以实现的。制成的pn异质结二极管的电流-电压（IV）特性显示出典型的整流行为。所制造的Cu2O /β-Ga2O3光电探测器以反向模式实现了皮安级电流的灵敏检测。
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