Methylation-Induced Reversible Metallic-Semiconducting Transition of Single-Walled Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.,Nano Letters

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Methylation-Induced Reversible Metallic-Semiconducting Transition of Single-Walled Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.
Nano Letters ( IF 9.6 ) Pub Date : 2019-12-12 , DOI: 10.1021/acs.nanolett.9b04219
Ying Wang ₁ , Dayan Liu ₁ , Hongjie Zhang ₁ , Jiacheng Wang ₁ , Ran Du ₂ , Ting-Ting Li ₃ , Jinjie Qian ₁ , Yue Hu ₁ , Shaoming Huang _{1,

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Affiliation

Acquirement of aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays is one of the most promising directions to break Moore's Law, thus developing the next-generation electronic devices. Despite that widespread approaches have been developed, it is still a great challenge to facilely prepare s-SWNT arrays with tunable electronic properties. Herein, a different perspective is proposed to produce s-SWNT arrays by implementing reversible methylation reactions on the as-grown aligned SWNT arrays. In this way, the metallic single-walled carbon nanotubes (m-SWNTs) are selectively and reversibly methylated to acquire semiconducting properties, to afford tunable electronic properties of the as-obtained SWNT arrays in a highly controllable and simple manner. Electrical measurements suggest a high fraction of s-SWNTs is attained (>97.5%) after methylation, facilitating its exceptional performance as a field-effect transistor (FET) with an on-off ratio of up to 17543. This method may provide a new way for the preparation of s-SWNT arrays with tunable electronic properties and impressive prospects toward the fabrication of high-performance FETs.

中文翻译：

用于高性能场效应晶体管的单壁碳纳米管阵列的甲基化诱导的可逆金属半导体转变。

对准半导体单壁碳纳米管（s-SWNT）阵列的获得是打破摩尔定律，开发下一代电子设备的最有希望的方向之一。尽管已经开发了广泛的方法，但是要容易地制备具有可调电子性质的s-SWNT阵列仍然是巨大的挑战。在本文中，提出了不同的观点来通过在生长中的对准的SWNT阵列上实施可逆甲基化反应来生产s-SWNT阵列。以此方式，金属单壁碳纳米管（m-SWNT）被选择性地和可逆地甲基化以获得半导体性质，从而以高度可控和简单的方式提供所获得的SWNT阵列的可调电子性质。电学测量表明，可以实现较高比例的s-SWNT（> 97。

更新日期：2019-12-13

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