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Atomically Resolving Polymorphs and Crystal Structures of In2Se3
Chemistry of Materials ( IF 7.2 ) Pub Date : 2019-12-12 , DOI: 10.1021/acs.chemmater.9b03499 Lixuan Liu 1, 2 , Jiyu Dong 2 , Junquan Huang 2 , Anmin Nie 2 , Kun Zhai 2 , Jianyong Xiang 2 , Bochong Wang 2 , Fusheng Wen 2 , Congpu Mu 2 , Zhisheng Zhao 2 , Yongji Gong 1 , Yongjun Tian 2 , Zhongyuan Liu 2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2019-12-12 , DOI: 10.1021/acs.chemmater.9b03499 Lixuan Liu 1, 2 , Jiyu Dong 2 , Junquan Huang 2 , Anmin Nie 2 , Kun Zhai 2 , Jianyong Xiang 2 , Bochong Wang 2 , Fusheng Wen 2 , Congpu Mu 2 , Zhisheng Zhao 2 , Yongji Gong 1 , Yongjun Tian 2 , Zhongyuan Liu 2
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The structures of the various phases endow In2Se3 unique properties as well as a broad range of potential applications. However, the controversy on the structures of In2Se3 strongly hinders the exploitation of its properties and potentially gives rise to misdirection of its applications. Here, taking advantage of state-of-the-art aberration-corrected scanning transmission electron microscopy, we demonstrate the atomic-scale structures of lab-created and purchased In2Se3 compounds. Six phases in three polymorphs at room temperature have been observed among all the samples, which include 2H and 3R α-In2Se3, 1T, 2H, and 3R β-In2Se3, and none-layered γ-In2Se3. Raman spectra are directly correlated to individual In2Se3 phases, providing fingerprints for identifying various phases of In2Se3. In addition, obvious out-of-plane ferroelectricity of 2H α-In2Se3 was also observed by piezoresponse force microscopy, enabling its potential application in ferroelectric devices.
中文翻译：
In 2 Se 3的原子解析多晶型物和晶体结构
各个相的结构赋予In 2 Se 3独特的性能以及广泛的潜在应用。然而，关于In 2 Se 3的结构的争议极大地阻碍了In 2 Se 3的性能的利用，并可能引起其应用的误导。在这里，我们利用最先进的像差校正扫描透射电子显微镜，证明了实验室创建和购买的In 2 Se 3化合物的原子尺度结构。六个相在三个多晶型物在室温下已经在所有观察到的样品，其中包括图2H和3Rα-在2硒3，1T，2H，与3Rβ-在2硒3，和无分层γ-在2硒3。拉曼光谱与In 2 Se 3的各个相直接相关，从而为识别In 2 Se 3的各个相提供了指纹。此外，2Hα-中的明显外的平面铁电2硒3也通过压电响应力显微镜观察到的，其使得能够在铁电体元件的潜在应用。
更新日期：2019-12-13
中文翻译：
In 2 Se 3的原子解析多晶型物和晶体结构
各个相的结构赋予In 2 Se 3独特的性能以及广泛的潜在应用。然而，关于In 2 Se 3的结构的争议极大地阻碍了In 2 Se 3的性能的利用，并可能引起其应用的误导。在这里，我们利用最先进的像差校正扫描透射电子显微镜，证明了实验室创建和购买的In 2 Se 3化合物的原子尺度结构。六个相在三个多晶型物在室温下已经在所有观察到的样品，其中包括图2H和3Rα-在2硒3，1T，2H，与3Rβ-在2硒3，和无分层γ-在2硒3。拉曼光谱与In 2 Se 3的各个相直接相关，从而为识别In 2 Se 3的各个相提供了指纹。此外，2Hα-中的明显外的平面铁电2硒3也通过压电响应力显微镜观察到的，其使得能够在铁电体元件的潜在应用。
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