Abstract An efficient perovkite light-emitting diode (PeLED) is fabricated by incorporating 1,3,5-tri (m-pyrid-3-yl-phenyl)benzene (TmPyPB) between the emitting layer (EML) and the electron transporting layer (ETL), where TmPyPB plays an indispensable blocking effect on both excitons and holes. It shows a maximum current efficiency of 9.37 cd/A, and the corresponding external quantum efficiency (EQE) of 2.42% with a saturated green color Commission International de I'Eclairage (CIE1993) coordinated of (0.1279, 0.7951) under a driving voltage of 6 V. Meanwhile, the operational lifetime of the TmPyPB-based PeLED is improved to about 2.6-fold to that of the one with only the traditional ETL of aluminum 8-hydroxyquinolinate (Alq3). The enhancements of electroluminescence (EL) performance are mainly attributed to better confinement of both the holes and the excitons in the EML, and more balanced carrier transportation in the TmPyPB-based PeLED. This work offers a feasible strategy to develop high performance optoelectronic devices.

中文翻译：

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采用 1,3,5-三（间吡啶-3-基-苯基）苯作为空穴和激子阻挡层的高效 CsPbBr3 钙钛矿发光二极管

摘要 通过在发光层 (EML) 和电子传输层之间加入 1,3,5-三(间吡啶-3-基-苯基)苯 (TmPyPB)，制备了一种高效的钙钛矿发光二极管 (PeLED)。 ETL)，其中 TmPyPB 对激子和空穴都起着不可或缺的阻挡作用。它显示最大电流效率为 9.37 cd/A，相应的外部量子效率 (EQE) 为 2.42%，在驱动电压为 (0.1279, 0.7951) 的情况下，饱和绿色 Commission International de I'Eclairage (CIE1993) 协调为6 V. 同时，基于 TmPyPB 的 PeLED 的使用寿命比仅使用 8-羟基喹啉铝 (Alq3) 的传统 ETL 的 PeLED 的使用寿命提高了约 2.6 倍。电致发光 (EL) 性能的增强主要归因于 EML 中空穴和激子的更好限制，以及基于 TmPyPB 的 PeLED 中更平衡的载流子传输。这项工作为开发高性能光电器件提供了可行的策略。