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Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO.
Scientific Reports ( IF 3.8 ) Pub Date : 2019-11-28 , DOI: 10.1038/s41598-019-54332-6
Weifeng Jiang 1 , Jinye Miao 1 , Tao Li 1
Affiliation  

A silicon mode-selective switch (MSS) is proposed by using a horizontal metal-oxide-semiconductor (MOS) capacitor incorporated with the epsilon-near-zero (ENZ) indium-tin-oxide (ITO). The carrier concentration of the double accumulation-layers in ITO can be adjusted via the applied gate-voltage to achieve the desired switching state. The MOS-type mode of the central MOS-capacitor based triple-waveguide coupler is introduced and optimised by using the full-vectorial finite element method to switch the "OFF" and "ON" states. The thickness of the accumulation layer and the optimal design are studied by using the 3D full-vectorial eigenmode expansion method. The optimised quasi-TE0 and quasi-TE1 modes based MSSes are with the extinction ratios of 28.52 dB (19.05 dB), 37.29 dB (17.8 dB), and 37.29 dB (23.7 dB), at "OFF" ("ON") states for the accumulation-layer thicknesses of 1.5, 5.0, and 10.0 nm, respectively. The operation speed can achieve to be 6.3 GHz, 6.2 GHz, and 6.2 GHz for these three accumulation-layer thicknesses, respectively. The performance of the proposed MSS with a 2.5 V gate-voltage is also studied for preventing the oxide breakdown. The proposed MSS can be applied in the mode-division-multiplexing networks for signal switching and exchanging.

中文翻译:

通过带有ENZ-ITO的水平金属氧化物半导体电容器的硅模式选择开关。

提出了一种硅模式选择开关(MSS),该技术是通过使用一种水平金属氧化物半导体(MOS)电容器与ε-接近零(ENZ)铟锡氧化物(ITO)结合而成的。可以通过施加的栅极电压来调节ITO中双累积层的载流子浓度,以实现所需的开关状态。通过使用全矢量有限元方法切换“ OFF”和“ ON”状态,介绍并优化了基于中央MOS电容器的三重波导耦合器的MOS型模式。利用3D全矢量本征模展开方法研究了堆积层的厚度和优化设计。在“关闭”状态下,基于优化的准TE0和准TE1模式的MSS的消光比分别为28.52 dB(19.05 dB),37.29 dB(17.8 dB)和37.29 dB(23.7 dB)。累积层厚度分别为1.5、5.0和10.0 nm的(“ ON”)状态。对于这三个累积层厚度,操作速度可以分别达到6.3 GHz,6.2 GHz和6.2 GHz。还研究了所建议的MSS具有2.5 V栅极电压的性能,以防止氧化物击穿。所提出的MSS可以应用于模式分割多路复用网络中以进行信号交换和交换。
更新日期:2019-11-29
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