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Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes
Nature ( IF 50.5 ) Pub Date : 2019-11-27 , DOI: 10.1038/s41586-019-1771-5
Yu-Ho Won 1 , Oul Cho 1 , Taehyung Kim 1 , Dae-Young Chung 1 , Taehee Kim 2 , Heejae Chung 1 , Hyosook Jang 1 , Junho Lee 1 , Dongho Kim 2 , Eunjoo Jang 1
Nature ( IF 50.5 ) Pub Date : 2019-11-27 , DOI: 10.1038/s41586-019-1771-5
Yu-Ho Won 1 , Oul Cho 1 , Taehyung Kim 1 , Dae-Young Chung 1 , Taehee Kim 2 , Heejae Chung 1 , Hyosook Jang 1 , Junho Lee 1 , Dongho Kim 2 , Eunjoo Jang 1
Affiliation
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Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.
中文翻译：
高效稳定的InP/ZnSe/ZnS量子点发光二极管
量子点 (QD) 发光二极管 (LED) 是大面板显示器的理想选择，因为它们具有出色的效率、色纯度、可靠性和经济高效的制造1-4。密集的努力已经产生了效率分别为 20.5%4、21.0%5 和 19.8%6 的红色、绿色和蓝色发光 QD-LED，但仍然需要提高设备的运行稳定性并更换它们有毒镉成分，具有更环保的替代品。基于磷化铟 (InP) 的材料和器件的性能远远落后于含 Cd 的同类材料和器件。在这里，我们提出了一种制备均匀 InP 核和高度对称的核/壳 QD 的合成方法，其量子产率约为 100%。特别是，我们在初始 ZnSe 壳的生长过程中添加氢氟酸来蚀刻氧化 InP 核表面，然后我们在 340 摄氏度下实现高温 ZnSe 生长。工程壳厚度抑制了能量转移和俄歇复合以保持高发光效率，并且初始表面配体被替换为较短的配体以获得更好的电荷注入。优化的 InP/ZnSe/ZnS QD-LED 的理论最大外量子效率为 21.4%，最大亮度为每平方米 100,000 坎德拉，并且在每平方米 100 坎德拉下具有百万小时的超长寿命，代表了性能可与最先进的含镉 QD-LED 相媲美。这些制备好的基于 InP 的 QD-LED 很快就可以用于商业显示器。
更新日期：2019-11-27
中文翻译：
高效稳定的InP/ZnSe/ZnS量子点发光二极管
量子点 (QD) 发光二极管 (LED) 是大面板显示器的理想选择，因为它们具有出色的效率、色纯度、可靠性和经济高效的制造1-4。密集的努力已经产生了效率分别为 20.5%4、21.0%5 和 19.8%6 的红色、绿色和蓝色发光 QD-LED，但仍然需要提高设备的运行稳定性并更换它们有毒镉成分，具有更环保的替代品。基于磷化铟 (InP) 的材料和器件的性能远远落后于含 Cd 的同类材料和器件。在这里，我们提出了一种制备均匀 InP 核和高度对称的核/壳 QD 的合成方法，其量子产率约为 100%。特别是，我们在初始 ZnSe 壳的生长过程中添加氢氟酸来蚀刻氧化 InP 核表面，然后我们在 340 摄氏度下实现高温 ZnSe 生长。工程壳厚度抑制了能量转移和俄歇复合以保持高发光效率，并且初始表面配体被替换为较短的配体以获得更好的电荷注入。优化的 InP/ZnSe/ZnS QD-LED 的理论最大外量子效率为 21.4%，最大亮度为每平方米 100,000 坎德拉，并且在每平方米 100 坎德拉下具有百万小时的超长寿命，代表了性能可与最先进的含镉 QD-LED 相媲美。这些制备好的基于 InP 的 QD-LED 很快就可以用于商业显示器。
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