Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory.,ACS Applied Materials & Interfaces

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Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-12-03 , DOI: 10.1021/acsami.9b16876
Long Zheng _{1,

2} , Wenxiong Song ₁ , Zhitang Song ₁ , Sannian Song ₁

Affiliation

A multilevel phase-change memory device was successfully designed, which was fabricated using a Ge40Te60/Cr superlattice-like (SLL) structure. In the SLL films, a two-step phase change process is observed at elevated temperatures, which reveals the crystallization of Ge40Te60 (GT) and an interface-dominated formation of Cr2Ge2Te6 (CrGT). The bonding of Cr-Te and Ge-Ge is accompanied by the breaking of a Ge-Te bond, which is mainly in the Ge-rich GeTe4-nGen units. The formation of CrGT is related to the breaking apart of the edge-sharing octahedron in GT and Cr replacement at Ge sites. The crystalline GT acts as the crystallization precursors in the formation of the CrGT phase. The stable reversible two-step phase change can guarantee the reliability of the multilevel storage. The present work may shed light on the possible mechanism of the CrGT phase transition-based interfacial dynamic process. The designed multiple crystallization system demonstrates a potential for multilevel storage.

中文翻译：

在用于多级相变存储器的超晶格状相变材料中设计多重结晶。

成功设计了一种多层相变存储器件，该器件是使用Ge40Te60 / Cr类超晶格（SLL）结构制造的。在SLL薄膜中，在升高的温度下观察到两步相变过程，这揭示了Ge40Te60（GT）的结晶和以Cr2Ge2Te6（CrGT）为主的界面形成。Cr-Te和Ge-Ge的键合伴随着Ge-Te键的断裂，该键主要存在于富含Ge的GeTe4-nGen单元中。CrGT的形成与GT中的边缘共享八面体的破裂和Ge位的Cr置换有关。结晶GT在CrGT相形成过程中充当结晶前体。稳定的可逆两步相变可以保证多层存储的可靠性。本工作可能会阐明基于CrGT相变的界面动力学过程的可能机理。设计的多重结晶系统展示了多层存储的潜力。

更新日期：2019-12-03

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