In this study, InSb p-i-n photodetectors with In_0.82Al_0.18Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In_0.82Al_0.18Sb barrier layer increased the 77 K R₀A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 10⁹ cmHz^1/2W⁻¹ at 5.3 µm.

中文翻译：

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InSb光电探测器通过异质外延在Si上集成到中红外波长区域

在这项研究中，具有In _0.82 Al _0.18 Sb势垒层的InSb pin光电探测器通过AlSb / GaSb缓冲液通过异质外延生长在（100）6°切入的Si衬底上。基于界面失配阵列生长模式，GaSb / Si和InSb / AlSb界面处的位错适应了晶格失配。的In _0.82铝_0.18 Sb的阻挡层增加了77 KR ₀的检测器的。从180 K到300 K，世代重组机制主导了探测器中暗电流的产生，并且在120 K以下，表面泄漏变得占主导地位。探测器表现出0.475 A / W的77 K响应度和约翰逊噪声极限的探测性。 3.08×10 ⁹ cmHz ^1/2瓦^-1在5.3 µm。