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Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
ACS Omega ( IF 3.7 ) Pub Date : 2019-10-25 , DOI: 10.1021/acsomega.9b01752
Elisha Mercado 1 , Yan Zhou 1 , Yong Xie 2 , Qinghua Zhao 3 , Hui Cai 4 , Bin Chen 4 , Wanqi Jie 3 , Sefaattin Tongay 4 , Tao Wang 3 , Martin Kuball 1
Affiliation  

Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dramatically via encapsulation with graphene. Through examining Raman signatures of degradation, we show that the choice of substrate significantly impacts the degradation rate and that the process is accelerated by the transfer of GaTe to hydrophilic substrates such as SiO2/Si. We find that double encapsulation with both top and bottom graphene layers can extend the lifetime of the material for several weeks. The photoresponse of flakes encapsulated in this way is only reduced by 17.6 ± 0.4% after 2 weeks, whereas unencapsulated flakes display no response after this time. Our results demonstrate the potential for alternative, van der Waals material-based passivation strategies in unstable layered materials and highlight the need for careful selection of substrates for 2D electronic devices.

中文翻译:

石墨烯双包封法钝化层状碲化镓

在环境条件下,层状半导体碲化镓(GaTe)经历了快速的结构转变为降解相,从而限制了其在诸如光开关等设备中的实用性。在这项工作中,我们证明了通过用石墨烯包封可以显着减慢GaTe薄片的降解过程。通过检查降解的拉曼信号,我们表明,底物的选择会显着影响降解速率,并且通过将GaTe转移至亲水性底物(如SiO 2)来加速该过程。/ Si。我们发现,顶层和底层石墨烯层都进行双重封装可以将材料的寿命延长数周。2周后,以这种方式封装的薄片的光响应仅降低了17.6±0.4%,而未封装的薄片在此时间之后没有任何响应。我们的结果证明了在不稳定的层状材料中基于范德华斯材料的替代钝化策略的潜力,并强调了为2D电子设备仔细选择基板的需求。
更新日期:2019-11-05
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