Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption,Advanced Functional Materials

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Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-11-04 , DOI: 10.1002/adfm.201906131
Chuanlai Ren _{1,

2} , Gaokuo Zhong ₂ , Qun Xiao _{1,

2} , Congbing Tan ₃ , Ming Feng ₄ , Xiangli Zhong ₁ , Feng An _{1,

2} , Jinbin Wang ₁ , Mengfei Zi _{1,

2} , Mingkai Tang _{1,

2} , Yong Tang ₁ , Tingting Jia ₂ , Jiangyu Li ₂

Affiliation

Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all‐inorganic flexible FeFET based on epitaxial Pb(Zr_0.1Ti_0.9)O₃/ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10⁴ as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment.

中文翻译：

高度耐用的柔性铁电场效应晶体管，可在高温下以低功耗运行

尽管基于有机材料的先进柔性FeFET具有先进的功能，但具有多种功能和可调特性的柔性铁电场效应晶体管（FeFET）对于低功率感测，非易失性数据存储以及新兴的忆阻器应用（如人工突触）具有吸引力。极化低，矫顽力大，工作电压高，并且热稳定性差。在这里，开发了一种基于云母衬底上外延Pb（Zr _0.1 Ti _0.9）O ₃ / ZnO异质结构的全无机柔性FeFET ，它不仅在低电压（±6 V）下工作，而且在低电压下消耗了低功率。出色的开/关比10 ⁴以及保持特性，还显示出在大的弯曲变形（4毫米），延长的弯曲循环（500个循环）和200°C的高温操作下的强大的FeFET性能。重要的是，FeFET的特性取决于温度，而不取决于温度历史记录，这对于在重复的热负载下运行至关重要。FeFET的出色机械柔韧性和功能稳固性源自云母独特的范德华粘合层结构，有利于减小弯曲半径，但应变适中。这项工作证明了云母作为一个通用平台的巨大前景，该云母可以集成用于柔性电子设备的复杂功能设备，特别是在恶劣环境下。

更新日期：2020-01-04

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