Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor with two-dimensional (2D) materials. The gate tunability of resistive switching in 2D memtransistor enables the multifunctional modulation and promising applications in neuromorphic network. However, the tunability of switching ratio in 2D memtransistor remains small and seriously limits its practical application. Here, we investigate a memtransistor based on a 3-layer MoS₂ and realize the electric, light, and their combined modulations. In the electric gate mode, switching ratio is tunable in a large scale in the range 10⁰–10⁵. In the light gate mode, a maximum conductance change of 450% can be obtained by increasing the light power. Moreover, the switching ratio can be further improved to ∼10⁶ through a combination of electric and light dual gating. Such a gating effect can be ascribed to the modulation of carrier density in the MoS₂ channel. Our work provides a simple approach for achieving a high-performance multifunctional memtransistor.

中文翻译：

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电和光双栅极可调谐MoS ₂晶体管

忆阻器是一种多端子设备，将忆阻器和场效应晶体管的概念与二维（2D）材料结合在一起。2D薄膜晶体管中电阻开关的栅极可调性可实现多功能调制，并在神经形态网络中具有广阔的应用前景。然而，二维薄膜晶体管中开关比的可调性仍然很小，并严重限制了其实际应用。在这里，我们研究基于三层MoS ₂的Memtransistor，并实现电，光及其组合的调制。在电动门模式下，开关比可在10 ⁰ –10 ⁵范围内进行大规模调整。在光闸模式下，通过增加光功率可以获得450％的最大电导率变化。此外，通过电和光双选通的组合，可以将开关比进一步提高到〜10 ⁶。这种选通效应可以归因于MoS ₂通道中载流子密度的调制。我们的工作为实现高性能多功能薄膜晶体管提供了一种简单的方法。