Non-collinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.

中文翻译：

---

将非共线反铁磁金属 Mn3Sn 集成到用于电场控制的铁电氧化物上

非共线反铁磁材料在自旋电子学领域受到越来越多的关注，因为它们的奇异拓扑特征，如贝里曲率引起的异常霍尔效应和可能的磁性 Weyl 态可用于未来的拓扑反铁磁自旋电子器件。在这项工作中，我们报告了将反铁磁金属 Mn3Sn 薄膜成功集成到铁电氧化物 PMN-PT 上。通过优化生长，我们实现了具有几十 mT 的小开关磁场的大异常霍尔效应，完全可与块状 Mn3Sn 单晶相媲美，具有反铁磁有序的 Mn3Sn 薄膜中的各向异性磁阻和负平行磁阻，与特征相似在块状 Mn3Sn 单晶中的 Weyl 态。更重要的是，