This study proposes a hybrid solar cell structure for a highly efficient silicon solar cell obtained by combining two passivating contact structures, namely, a heterojunction and polysilicon passivating contact. Given that the major cause of the loss in efficiency of crystalline silicon solar cells is carrier recombination at the metal‐semiconductor junction, a passivating contact having high‐quality passivation and a low contact resistance was introduced. In this study, two major passivating contact solar cells were combined. By applying an intrinsic thin amorphous silicon layer at the front and a tunneling oxide at the rear, a hybrid silicon solar cell with an efficiency of 21.8% was fabricated. Moreover, to evaluate the potential efficiency limit and to suggest methods for improving the cell performance of the proposed amorphous silicon emitter tunnel oxide back contact structure, the cell efficiency was simulated, and the result indicated that an efficiency of 26% could be achieved by controlling the thickness and resistivity of the wafer.

中文翻译：

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具有非晶硅钝化孔触点的高效n型硅太阳能电池的隧道氧化物钝化电子触点

这项研究提出了一种用于高效硅太阳能电池的混合太阳能电池结构，该结构是通过结合两个钝化接触结构（即异质结和多晶硅钝化接触）而获得的。考虑到晶体硅太阳能电池效率损失的主要原因是金属-半导体结处的载流子复合，因此引入了具有高质量钝化和低接触电阻的钝化接触。在这项研究中，两个主要的钝化接触式太阳能电池相结合。通过在其前部施加本征的非晶硅薄层，并在其后部施加隧穿氧化物，可以制造出效率为21.8％的混合硅太阳能电池。而且，