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Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.
Nature Communications ( IF 14.7 ) Pub Date : 2019-10-16 , DOI: 10.1038/s41467-019-12592-w Ki Seok Kim 1 , You Jin Ji 1 , Ki Hyun Kim 1 , Seunghyuk Choi 2 , Dong-Ho Kang 3, 4 , Keun Heo 4 , Seongjae Cho 5 , Soonmin Yim 6, 7 , Sungjoo Lee 2 , Jin-Hong Park 4 , Yeon Sik Jung 7 , Geun Young Yeom 1, 2
Nature Communications ( IF 14.7 ) Pub Date : 2019-10-16 , DOI: 10.1038/s41467-019-12592-w Ki Seok Kim 1 , You Jin Ji 1 , Ki Hyun Kim 1 , Seunghyuk Choi 2 , Dong-Ho Kang 3, 4 , Keun Heo 4 , Seongjae Cho 5 , Soonmin Yim 6, 7 , Sungjoo Lee 2 , Jin-Hong Park 4 , Yeon Sik Jung 7 , Geun Young Yeom 1, 2
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The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible-infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.
中文翻译：
串联纳米桥多异质结的超灵敏MoS2光电探测器。
基于二硫化钼（MoS 2）场效应晶体管的各种光电检测器的最新报道表明，难以在适用于各个领域的宽检测范围[可见红外（IR）]中获得光电性能。在这里，通过对多层MoS2进行选择性层控制，形成单层/多层纳米桥多异质结结构（大于300个结，间隔25 nm），在宽光谱范围内具有超灵敏光电性能的光电探测器可以成功地制造出比先前报道的基于MoS2的光电探测器更好的反射率范围（在λ= 520 nm时为2.67×106 A / W和在λ= 1064 nm时为1.65×104 A / W）。纳米桥多异质结被认为是一种重要的设备技术，可以应用于宽带光感测，
更新日期：2019-10-17
中文翻译：
串联纳米桥多异质结的超灵敏MoS2光电探测器。
基于二硫化钼（MoS 2）场效应晶体管的各种光电检测器的最新报道表明，难以在适用于各个领域的宽检测范围[可见红外（IR）]中获得光电性能。在这里，通过对多层MoS2进行选择性层控制，形成单层/多层纳米桥多异质结结构（大于300个结，间隔25 nm），在宽光谱范围内具有超灵敏光电性能的光电探测器可以成功地制造出比先前报道的基于MoS2的光电探测器更好的反射率范围（在λ= 520 nm时为2.67×106 A / W和在λ= 1064 nm时为1.65×104 A / W）。纳米桥多异质结被认为是一种重要的设备技术，可以应用于宽带光感测，
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