GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (Adv. Funct. Mater. 42/2019),Advanced Functional Materials

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GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (Adv. Funct. Mater. 42/2019)
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-10-15 , DOI: 10.1002/adfm.201970293
Yuxia Feng ₁ , Xuelin Yang ₁ , Zhihong Zhang ₁ , Duan Kang ₁ , Jie Zhang ₁ , Kaihui Liu ₁ , Xinzheng Li ₁ , Jianfei Shen ₁ , Fang Liu ₁ , Tao Wang ₁ , Panfeng Ji ₁ , Fujun Xu ₁ , Ning Tang ₁ , Tongjun Yu ₁ , Xinqiang Wang _{1,

2} , Dapeng Yu ₁ , Weikun Ge ₁ , Bo Shen _{1,

2}

Affiliation

In article number 1905056, Xuelin Yang, Kaihui Liu, Bo Shen, and co‐workers achieve the epitaxy of single‐crystalline gallium nitride (GaN) film on a complementary metal‐oxide‐semiconductor‐compatible Si(100) substrate by applying a one‐atom‐thick single‐crystalline graphene buffer layer. The monolayer graphene provides an in‐plane driving force for the uniform alignment of nitrides domains. This apppoach can also enable the growth of wafer‐scale hexagonal single‐crystalline films on amorphous or flexible substrates.

中文翻译：

GaN-on-Si（100）：在石墨烯缓冲的CMOS兼容Si（100）衬底上的单晶GaN膜的外延（Adv.Funct.Mater.42 / 2019）

在文章编号1905056中，杨雪琳，刘开辉，沉波和同事们通过应用一种互补的金属氧化物半导体兼容的Si（100）衬底实现了单晶氮化镓（GaN）膜的外延。原子厚的单晶石墨烯缓冲层。单层石墨烯为氮化物域的均匀排列提供了面内驱动力。这种方法还可以使晶片尺寸的六角形单晶膜在无定形或柔性基板上生长。

更新日期：2019-10-16

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