Gallium indium phosphide (${\mathrm{Ga}}_{0.51}{\mathrm{In}}_{0.49}\mathrm{P}$), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide ($0.2\times 11\times 1300\mathrm{\mu m}$) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed ($-34\mathrm{dB}$), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.

中文翻译：

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抑制光致发光的磷化镓铟磷微结构，用于非线性光学

磷化铟镓（${嘎}_{0.51}{在}_{0.49}\mathrm{P}$晶格与砷化镓匹配的）表现出显着的二阶非线性特性，并且由于其直接带隙而具有很强的光致发光（PL）。通过测量GaInP微波波导产生的二次谐波（$0.2\times 11\times 1300\mathrm{微米}$）在刺激内在光漂白之前和之后，我们证明PL可以被强烈抑制（$-34\mathrm{D\; b}$），保持非线性特性不变，使其适用于低噪声应用。