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Mechanical dissipation via image potential states on a topological insulator surface.
Nature Materials ( IF 37.2 ) Pub Date : 2019-10-14 , DOI: 10.1038/s41563-019-0492-3
D Yildiz 1 , M Kisiel 1 , U Gysin 1 , O Gürlü 2 , E Meyer 1
Nature Materials ( IF 37.2 ) Pub Date : 2019-10-14 , DOI: 10.1038/s41563-019-0492-3
D Yildiz 1 , M Kisiel 1 , U Gysin 1 , O Gürlü 2 , E Meyer 1
Affiliation
Joule energy loss due to resistive heating is omnipresent in today's electronic devices whereas quantum-mechanical dissipation is largely unexplored. Here, we experimentally observe a suppression of the Joule dissipation in Bi2Te3 due to topologically protected surface states. Instead, a different type of dissipation mechanism is observed by pendulum atomic force microscopy, which is related to single-electron tunnelling resonances into image potential states that are slightly above the Bi2Te3 surface. The application of a magnetic field leads to the breakdown of the topological protection of the surface states and restores the expected Joule dissipation process. Nanomechanical energy dissipation experienced by the cantilever of the pendulum atomic force microscope provides a rich source of information on the dissipative nature of the quantum-tunnelling phenomena on the topological insulator surface, with implications for coupling a mechanical oscillator to the generic quantum material.
中文翻译:
通过拓扑绝缘体表面上的图像势态进行机械耗散。
由于电阻加热导致的焦耳能量损失在当今的电子设备中无处不在,而量子力学耗散在很大程度上尚未得到探索。在这里,我们通过实验观察到由于拓扑保护的表面状态,Bi2Te3 中的焦耳耗散受到抑制。相反,通过摆式原子力显微镜观察到不同类型的耗散机制,这与单电子隧穿共振进入略高于 Bi2Te3 表面的图像电位状态有关。磁场的应用导致表面状态的拓扑保护被破坏并恢复预期的焦耳耗散过程。
更新日期:2019-10-14
中文翻译:
通过拓扑绝缘体表面上的图像势态进行机械耗散。
由于电阻加热导致的焦耳能量损失在当今的电子设备中无处不在,而量子力学耗散在很大程度上尚未得到探索。在这里,我们通过实验观察到由于拓扑保护的表面状态,Bi2Te3 中的焦耳耗散受到抑制。相反,通过摆式原子力显微镜观察到不同类型的耗散机制,这与单电子隧穿共振进入略高于 Bi2Te3 表面的图像电位状态有关。磁场的应用导致表面状态的拓扑保护被破坏并恢复预期的焦耳耗散过程。